P-Type AlN nanowires and AlN nanowire light emitting diodes on Si

S. Zhao, A. T. Connie, B. H. Le, X. Kong, H. Guo, X. Z. Du, J. Y. Lin, H. X. Jiang, I. Shih, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).

Original languageEnglish
Title of host publication2015 IEEE Summer Topicals Meeting Series, SUM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-132
Number of pages2
ISBN (Electronic)9781479974689
DOIs
StatePublished - Sep 9 2015
EventIEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas
Duration: Jul 13 2015Jul 15 2015

Publication series

Name2015 IEEE Summer Topicals Meeting Series, SUM 2015

Conference

ConferenceIEEE Summer Topicals Meeting Series, SUM 2015
CountryBahamas
CityNassau
Period07/13/1507/15/15

Keywords

  • Si
  • hopping conduction
  • light emitting diodes
  • nanowire
  • p-type AlN

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    Zhao, S., Connie, A. T., Le, B. H., Kong, X., Guo, H., Du, X. Z., Lin, J. Y., Jiang, H. X., Shih, I., & Mi, Z. (2015). P-Type AlN nanowires and AlN nanowire light emitting diodes on Si. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 131-132). [7248228] (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248228