P-Type AlN nanowires and AlN nanowire light emitting diodes on Si

S. Zhao; A. T. Connie; B. H. Le; X. Kong; H. Guo; X. Z. Du; J. Y. Lin; H. X. Jiang; I. Shih; Z. Mi

doi:10.1109/PHOSST.2015.7248228

P-Type AlN nanowires and AlN nanowire light emitting diodes on Si

S. Zhao, A. T. Connie, B. H. Le, X. Kong, H. Guo, X. Z. Du, J. Y. Lin, H. X. Jiang, I. Shih, Z. Mi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	131-132
Number of pages	2
ISBN (Electronic)	9781479974689
DOIs	https://doi.org/10.1109/PHOSST.2015.7248228
State	Published - Sep 9 2015
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: Jul 13 2015 → Jul 15 2015

Publication series

Name	2015 IEEE Summer Topicals Meeting Series, SUM 2015

Conference

Conference	IEEE Summer Topicals Meeting Series, SUM 2015
Country/Territory	Bahamas
City	Nassau
Period	07/13/15 → 07/15/15

Keywords

Si
hopping conduction
light emitting diodes
nanowire
p-type AlN

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10.1109/PHOSST.2015.7248228

Cite this

Zhao, S., Connie, A. T., Le, B. H., Kong, X., Guo, H., Du, X. Z., Lin, J. Y., Jiang, H. X., Shih, I., & Mi, Z. (2015). P-Type AlN nanowires and AlN nanowire light emitting diodes on Si. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 131-132). Article 7248228 (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248228

@inproceedings{50156c8dcb334878841d4c910519ee28,

title = "P-Type AlN nanowires and AlN nanowire light emitting diodes on Si",

abstract = "We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).",

keywords = "Si, hopping conduction, light emitting diodes, nanowire, p-type AlN",

author = "S. Zhao and Connie, {A. T.} and Le, {B. H.} and X. Kong and H. Guo and Du, {X. Z.} and Lin, {J. Y.} and Jiang, {H. X.} and I. Shih and Z. Mi",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",

year = "2015",

month = sep,

day = "9",

doi = "10.1109/PHOSST.2015.7248228",

language = "English",

series = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "131--132",

booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

}

Zhao, S, Connie, AT, Le, BH, Kong, X, Guo, H, Du, XZ, Lin, JY , Jiang, HX, Shih, I & Mi, Z 2015, P-Type AlN nanowires and AlN nanowire light emitting diodes on Si. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248228, 2015 IEEE Summer Topicals Meeting Series, SUM 2015, Institute of Electrical and Electronics Engineers Inc., pp. 131-132, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 07/13/15. https://doi.org/10.1109/PHOSST.2015.7248228

P-Type AlN nanowires and AlN nanowire light emitting diodes on Si. / Zhao, S.; Connie, A. T.; Le, B. H. et al.
2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 131-132 7248228 (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - P-Type AlN nanowires and AlN nanowire light emitting diodes on Si

AU - Zhao, S.

AU - Connie, A. T.

AU - Le, B. H.

AU - Kong, X.

AU - Guo, H.

AU - Du, X. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Shih, I.

AU - Mi, Z.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).

AB - We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).

KW - Si

KW - hopping conduction

KW - light emitting diodes

KW - nanowire

KW - p-type AlN

UR - http://www.scopus.com/inward/record.url?scp=84960480384&partnerID=8YFLogxK

U2 - 10.1109/PHOSST.2015.7248228

DO - 10.1109/PHOSST.2015.7248228

M3 - Conference contribution

AN - SCOPUS:84960480384

T3 - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

SP - 131

EP - 132

BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Summer Topicals Meeting Series, SUM 2015

Y2 - 13 July 2015 through 15 July 2015

ER -

P-Type AlN nanowires and AlN nanowire light emitting diodes on Si

Abstract

Publication series

Conference

Keywords

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