Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university

Daniel Mauch, Chris White, David Thomas, Andreas Neuber, James Dickens

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Recent advances and the current state-of-the-art for high speed 4H-SiC photoconductive semiconductor switches (PCSS) developed at Texas Tech University are summarized. A performance comparison of multiple generations of switch designs is also presented. These devices have experimentally demonstrated the capability of blocking DC electric fields up to 705 kV/cm (<0.1 mA leakage current), rise times of 0.63 ns (20/80), and switching 20 kV at 250 A with a di/dt of 75 kA/us at a burst repetition frequency of 65 MHz. Findings and optimizations pertaining to device geometry, sub-contact doping, contact thickness, triggering wavelength, and electron irradiation are presented. Device modeling and experimental results investigating current issues with device lifetime are presented as well.

Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
EditorsAllen L. Garner
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-26
Number of pages4
ISBN (Electronic)9781467373234
DOIs
StatePublished - Oct 1 2015
EventIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

ConferenceIEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
CountryUnited States
CitySanta Fe
Period06/1/1406/5/14

Keywords

  • high voltage
  • photoconductive semiconductor switches
  • photoconductivity
  • pulsed power
  • silicon carbide
  • solid state
  • switches

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