Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university

Daniel Mauch; Chris White; David Thomas; Andreas Neuber; James Dickens

doi:10.1109/IPMHVC.2014.7287198

Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university

Daniel Mauch, Chris White, David Thomas, Andreas Neuber, James Dickens

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

Recent advances and the current state-of-the-art for high speed 4H-SiC photoconductive semiconductor switches (PCSS) developed at Texas Tech University are summarized. A performance comparison of multiple generations of switch designs is also presented. These devices have experimentally demonstrated the capability of blocking DC electric fields up to 705 kV/cm (<0.1 mA leakage current), rise times of 0.63 ns (20/80), and switching 20 kV at 250 A with a di/dt of 75 kA/us at a burst repetition frequency of 65 MHz. Findings and optimizations pertaining to device geometry, sub-contact doping, contact thickness, triggering wavelength, and electron irradiation are presented. Device modeling and experimental results investigating current issues with device lifetime are presented as well.

Original language	English
Title of host publication	Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Editors	Allen L. Garner
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23-26
Number of pages	4
ISBN (Electronic)	9781467373234
DOIs	https://doi.org/10.1109/IPMHVC.2014.7287198
State	Published - Oct 1 2015
Event	IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 - Santa Fe, United States Duration: Jun 1 2014 → Jun 5 2014

Publication series

Name	Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

Conference

Conference	IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014
Country/Territory	United States
City	Santa Fe
Period	06/1/14 → 06/5/14

Keywords

high voltage
photoconductive semiconductor switches
photoconductivity
pulsed power
silicon carbide
solid state
switches

Access to Document

10.1109/IPMHVC.2014.7287198

Cite this

Mauch, D., White, C., Thomas, D., Neuber, A., & Dickens, J. (2015). Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university. In A. L. Garner (Ed.), Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014 (pp. 23-26). [7287198] (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2014.7287198

Mauch, Daniel ; White, Chris ; Thomas, David et al. / Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university. Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. editor / Allen L. Garner. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 23-26 (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014).

@inproceedings{ddcf3ccd2ea14f21b4aacd9b3384fcfd,

title = "Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university",

abstract = "Recent advances and the current state-of-the-art for high speed 4H-SiC photoconductive semiconductor switches (PCSS) developed at Texas Tech University are summarized. A performance comparison of multiple generations of switch designs is also presented. These devices have experimentally demonstrated the capability of blocking DC electric fields up to 705 kV/cm (<0.1 mA leakage current), rise times of 0.63 ns (20/80), and switching 20 kV at 250 A with a di/dt of 75 kA/us at a burst repetition frequency of 65 MHz. Findings and optimizations pertaining to device geometry, sub-contact doping, contact thickness, triggering wavelength, and electron irradiation are presented. Device modeling and experimental results investigating current issues with device lifetime are presented as well.",

keywords = "high voltage, photoconductive semiconductor switches, photoconductivity, pulsed power, silicon carbide, solid state, switches",

author = "Daniel Mauch and Chris White and David Thomas and Andreas Neuber and James Dickens",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; null ; Conference date: 01-06-2014 Through 05-06-2014",

year = "2015",

month = oct,

day = "1",

doi = "10.1109/IPMHVC.2014.7287198",

language = "English",

series = "Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "23--26",

editor = "Garner, {Allen L.}",

booktitle = "Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014",

}

Mauch, D, White, C, Thomas, D, Neuber, A & Dickens, J 2015, Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university. in AL Garner (ed.), Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014., 7287198, Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 23-26, IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014, Santa Fe, United States, 06/1/14. https://doi.org/10.1109/IPMHVC.2014.7287198

Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university. / Mauch, Daniel; White, Chris; Thomas, David et al.

Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. ed. / Allen L. Garner. Institute of Electrical and Electronics Engineers Inc., 2015. p. 23-26 7287198 (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university

AU - Mauch, Daniel

AU - White, Chris

AU - Thomas, David

AU - Neuber, Andreas

AU - Dickens, James

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Recent advances and the current state-of-the-art for high speed 4H-SiC photoconductive semiconductor switches (PCSS) developed at Texas Tech University are summarized. A performance comparison of multiple generations of switch designs is also presented. These devices have experimentally demonstrated the capability of blocking DC electric fields up to 705 kV/cm (<0.1 mA leakage current), rise times of 0.63 ns (20/80), and switching 20 kV at 250 A with a di/dt of 75 kA/us at a burst repetition frequency of 65 MHz. Findings and optimizations pertaining to device geometry, sub-contact doping, contact thickness, triggering wavelength, and electron irradiation are presented. Device modeling and experimental results investigating current issues with device lifetime are presented as well.

AB - Recent advances and the current state-of-the-art for high speed 4H-SiC photoconductive semiconductor switches (PCSS) developed at Texas Tech University are summarized. A performance comparison of multiple generations of switch designs is also presented. These devices have experimentally demonstrated the capability of blocking DC electric fields up to 705 kV/cm (<0.1 mA leakage current), rise times of 0.63 ns (20/80), and switching 20 kV at 250 A with a di/dt of 75 kA/us at a burst repetition frequency of 65 MHz. Findings and optimizations pertaining to device geometry, sub-contact doping, contact thickness, triggering wavelength, and electron irradiation are presented. Device modeling and experimental results investigating current issues with device lifetime are presented as well.

KW - high voltage

KW - photoconductive semiconductor switches

KW - photoconductivity

KW - pulsed power

KW - silicon carbide

KW - solid state

KW - switches

UR - http://www.scopus.com/inward/record.url?scp=84947087759&partnerID=8YFLogxK

U2 - 10.1109/IPMHVC.2014.7287198

DO - 10.1109/IPMHVC.2014.7287198

M3 - Conference contribution

AN - SCOPUS:84947087759

T3 - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

SP - 23

EP - 26

BT - Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014

A2 - Garner, Allen L.

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 1 June 2014 through 5 June 2014

ER -

Mauch D, White C, Thomas D, Neuber A , Dickens J. Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university. In Garner AL, editor, Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 23-26. 7287198. (Proceedings of the 2014 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2014). doi: 10.1109/IPMHVC.2014.7287198

Overview of high voltage 4H-SiC photoconductive semiconductor switch efforts at Texas tech university

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