The growth of ZnSnP2 on GaAs by gas source molecular beam epitaxy is described. A clear order-disorder transition is observed which as a function of the Sn/Zn flux ratio. It is confirmed that the transition leads to the chalcopyrite structure through infrared reflectance and Raman experiments. Analysis of the growth data shows that the chalcopyrite structure can be prepared only under growth conditions close to thermodynamic equilibrium.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 12 1999|