Order-disorder transition in epitaxial ZnSnP2

G. A. Seryogin; S. A. Nikishin; H. Temkin; A. M. Mintairov; J. L. Merz; M. Holtz

doi:10.1063/1.123778

Order-disorder transition in epitaxial ZnSnP₂

G. A. Seryogin, S. A. Nikishin, H. Temkin, A. M. Mintairov, J. L. Merz, M. Holtz

Electrical and Computer Engineering

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Abstract

The growth of ZnSnP₂ on GaAs by gas source molecular beam epitaxy is described. A clear order-disorder transition is observed which as a function of the Sn/Zn flux ratio. It is confirmed that the transition leads to the chalcopyrite structure through infrared reflectance and Raman experiments. Analysis of the growth data shows that the chalcopyrite structure can be prepared only under growth conditions close to thermodynamic equilibrium.

Original language	English
Pages (from-to)	2128-2130
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	15
DOIs	https://doi.org/10.1063/1.123778
State	Published - Apr 12 1999

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abstract = "The growth of ZnSnP2 on GaAs by gas source molecular beam epitaxy is described. A clear order-disorder transition is observed which as a function of the Sn/Zn flux ratio. It is confirmed that the transition leads to the chalcopyrite structure through infrared reflectance and Raman experiments. Analysis of the growth data shows that the chalcopyrite structure can be prepared only under growth conditions close to thermodynamic equilibrium.",

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AU - Seryogin, G. A.

AU - Nikishin, S. A.

AU - Temkin, H.

AU - Mintairov, A. M.

AU - Merz, J. L.

AU - Holtz, M.

PY - 1999/4/12

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N2 - The growth of ZnSnP2 on GaAs by gas source molecular beam epitaxy is described. A clear order-disorder transition is observed which as a function of the Sn/Zn flux ratio. It is confirmed that the transition leads to the chalcopyrite structure through infrared reflectance and Raman experiments. Analysis of the growth data shows that the chalcopyrite structure can be prepared only under growth conditions close to thermodynamic equilibrium.

AB - The growth of ZnSnP2 on GaAs by gas source molecular beam epitaxy is described. A clear order-disorder transition is observed which as a function of the Sn/Zn flux ratio. It is confirmed that the transition leads to the chalcopyrite structure through infrared reflectance and Raman experiments. Analysis of the growth data shows that the chalcopyrite structure can be prepared only under growth conditions close to thermodynamic equilibrium.

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DO - 10.1063/1.123778

M3 - Article

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VL - 74

SP - 2128

EP - 2130

JO - Applied Physics Letters

JF - Applied Physics Letters

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Order-disorder transition in epitaxial ZnSnP₂

Abstract

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