Optically active hydrogen dimers in silicon

B. Hourahine, R. Jones, A. N. Safonov, S. Öberg, P. R. Briddon, S. K. Estreicher

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

First-principles calculations are used to explore the structure and properties of several defects which are prominent luminescent centers in Si. The trigonal defects B41 and B711, which are known to contain two hydrogen atoms in equivalent and inequivalent sites, respectively, are attributed to a hexavacancy containing two H atoms in different configurations. It is suggested that the J luminescence centers arises from a stable hexavacancy without hydrogen atoms.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
StatePublished - Dec 15 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999

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