Optical transitions in Pr-implanted GaN

J. M. Zavada, R. A. Mair, C. J. Ellis, J. Y. Lin, H. X. Jiang, R. G. Wilson, P. A. Grudowski, R. D. Dupuis

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Abstract

Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7 × 1013/cm2. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050°C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10-300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices.

Original languageEnglish
Pages (from-to)790-792
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number6
DOIs
StatePublished - Aug 9 1999

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    Zavada, J. M., Mair, R. A., Ellis, C. J., Lin, J. Y., Jiang, H. X., Wilson, R. G., Grudowski, P. A., & Dupuis, R. D. (1999). Optical transitions in Pr-implanted GaN. Applied Physics Letters, 75(6), 790-792. https://doi.org/10.1063/1.124514