Optical transitions in Pr-implanted GaN

J. M. Zavada; R. A. Mair; C. J. Ellis; J. Y. Lin; H. X. Jiang; R. G. Wilson; P. A. Grudowski; R. D. Dupuis

doi:10.1063/1.124514

Optical transitions in Pr-implanted GaN

J. M. Zavada, R. A. Mair, C. J. Ellis, J. Y. Lin, H. X. Jiang, R. G. Wilson, P. A. Grudowski, R. D. Dupuis

Electrical and Computer Engineering

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Abstract

Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7 × 10¹³/cm². The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050°C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10-300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices.

Original language	English
Pages (from-to)	790-792
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.124514
State	Published - Aug 9 1999

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title = "Optical transitions in Pr-implanted GaN",

abstract = "Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7 × 1013/cm2. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050°C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10-300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices.",

author = "Zavada, {J. M.} and Mair, {R. A.} and Ellis, {C. J.} and Lin, {J. Y.} and Jiang, {H. X.} and Wilson, {R. G.} and Grudowski, {P. A.} and Dupuis, {R. D.}",

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doi = "10.1063/1.124514",

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volume = "75",

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T1 - Optical transitions in Pr-implanted GaN

AU - Zavada, J. M.

AU - Mair, R. A.

AU - Ellis, C. J.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Wilson, R. G.

AU - Grudowski, P. A.

AU - Dupuis, R. D.

PY - 1999/8/9

Y1 - 1999/8/9

N2 - Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7 × 1013/cm2. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050°C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10-300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices.

AB - Photoluminescence (PL) spectroscopy has been used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN. Wurtzite GaN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates and subsequently ion implanted with Pr to a dose of 5.7 × 1013/cm2. The implanted samples were annealed in nitrogen to facilitate recovery from implantation related damage. Narrow PL emission bands related to 4f intrashell transitions of the trivalent Pr ion were observed near 650, 950, 1100, and 1300 nm. The dependence of PL emission on sample temperature, excitation intensity, oxygen incorporation, and annealing temperature was systematically studied. We find that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1050°C applied in the current study. Furthermore, the PL emission shows no evidence of significant thermal quenching over the sample temperature range of 10-300 K. This thermal stability will have particular advantages for applications in high temperature optoelectronic devices.

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VL - 75

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EP - 792

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Optical transitions in Pr-implanted GaN

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