Optical transitions in InGaN/AlGaN single quantum wells

K. C. Zeng; M. Smith; J. Y. Lin; H. X. Jiang; J. C. Robert; E. L. Piner; F. G. McIntosh; S. M. Bedair; J. Zavada

doi:10.1116/1.589428

Optical transitions in InGaN/AlGaN single quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, J. C. Robert, E. L. Piner, F. G. McIntosh, S. M. Bedair, J. Zavada

Electrical and Computer Engineering

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13 Scopus citations

Abstract

The optical transitions in InGaN/AlGaN single quantum wells (SQWs) grown by metal-organic chemical vapor deposition have been studied. The spectral lineshape and the recombination dynamics of the optical transitions have been systematically investigated at different conditions. It was found that the main photoluminescence (PL) emission line in these SQW was contributed predominantly by the localized exciton recombination. However, time-resolved PL results revealed the presence of a band-to-impurity transition which cannot be resolved spectroscopically from the localized exciton transition line due to the broad emission linewidth.

Original language	English
Pages (from-to)	1139-1143
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	4
DOIs	https://doi.org/10.1116/1.589428
State	Published - 1997

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@article{a074f32283684975b4f9bc8439018943,

title = "Optical transitions in InGaN/AlGaN single quantum wells",

abstract = "The optical transitions in InGaN/AlGaN single quantum wells (SQWs) grown by metal-organic chemical vapor deposition have been studied. The spectral lineshape and the recombination dynamics of the optical transitions have been systematically investigated at different conditions. It was found that the main photoluminescence (PL) emission line in these SQW was contributed predominantly by the localized exciton recombination. However, time-resolved PL results revealed the presence of a band-to-impurity transition which cannot be resolved spectroscopically from the localized exciton transition line due to the broad emission linewidth.",

author = "Zeng, {K. C.} and M. Smith and Lin, {J. Y.} and Jiang, {H. X.} and Robert, {J. C.} and Piner, {E. L.} and McIntosh, {F. G.} and Bedair, {S. M.} and J. Zavada",

year = "1997",

doi = "10.1116/1.589428",

language = "English",

volume = "15",

pages = "1139--1143",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "4",

}

TY - JOUR

T1 - Optical transitions in InGaN/AlGaN single quantum wells

AU - Zeng, K. C.

AU - Smith, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Robert, J. C.

AU - Piner, E. L.

AU - McIntosh, F. G.

AU - Bedair, S. M.

AU - Zavada, J.

PY - 1997

Y1 - 1997

N2 - The optical transitions in InGaN/AlGaN single quantum wells (SQWs) grown by metal-organic chemical vapor deposition have been studied. The spectral lineshape and the recombination dynamics of the optical transitions have been systematically investigated at different conditions. It was found that the main photoluminescence (PL) emission line in these SQW was contributed predominantly by the localized exciton recombination. However, time-resolved PL results revealed the presence of a band-to-impurity transition which cannot be resolved spectroscopically from the localized exciton transition line due to the broad emission linewidth.

AB - The optical transitions in InGaN/AlGaN single quantum wells (SQWs) grown by metal-organic chemical vapor deposition have been studied. The spectral lineshape and the recombination dynamics of the optical transitions have been systematically investigated at different conditions. It was found that the main photoluminescence (PL) emission line in these SQW was contributed predominantly by the localized exciton recombination. However, time-resolved PL results revealed the presence of a band-to-impurity transition which cannot be resolved spectroscopically from the localized exciton transition line due to the broad emission linewidth.

UR - http://www.scopus.com/inward/record.url?scp=0001329353&partnerID=8YFLogxK

U2 - 10.1116/1.589428

DO - 10.1116/1.589428

M3 - Article

AN - SCOPUS:0001329353

SN - 1071-1023

VL - 15

SP - 1139

EP - 1143

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Optical transitions in InGaN/AlGaN single quantum wells

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