Optical transitions in InGaN/AlGaN single quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, J. C. Robert, E. L. Piner, F. G. McIntosh, S. M. Bedair, J. Zavada

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The optical transitions in InGaN/AlGaN single quantum wells (SQWs) grown by metal-organic chemical vapor deposition have been studied. The spectral lineshape and the recombination dynamics of the optical transitions have been systematically investigated at different conditions. It was found that the main photoluminescence (PL) emission line in these SQW was contributed predominantly by the localized exciton recombination. However, time-resolved PL results revealed the presence of a band-to-impurity transition which cannot be resolved spectroscopically from the localized exciton transition line due to the broad emission linewidth.

Original languageEnglish
Pages (from-to)1139-1143
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number4
DOIs
StatePublished - 1997

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