Optical transitions in GaN/AlxGa1-xN multiple quantum wells grown by molecular beam epitaxy

M. Smith; J. Y. Lin; H. X. Jiang; A. Salvador; A. Botchkarev; W. Kim; H. Morkoc

doi:10.1063/1.117495

Optical transitions in GaN/Al_xGa_1-xN multiple quantum wells grown by molecular beam epitaxy

M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, W. Kim, H. Morkoc

Electrical and Computer Engineering

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Abstract

Time-resolved photoluminescence was employed to study optical transitions in GaN/Al_xGa_1-xN multiple quantum wells (MQWs). The effects of quantum confinement on the optical transitions as well as on the exciton-phonon interactions in MQW were investigated. Recombination lifetimes of optical transitions were measured at different emission energies and temperatures from 10 to 300 K. It was found that the exciton recombination lifetime increases linearly with temperature up to 60 K, which is a hallmark of radiative exciton recombination in MQW. Observed optical transitions and their dynamics in GaN/Al_xGa_1-xN MQW were also compared with those in GaN epilayers and GaAs/Al_xGa_1-xAs MQW.

Original language	English
Pages (from-to)	2453-2455
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	17
DOIs	https://doi.org/10.1063/1.117495
State	Published - Oct 21 1996

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title = "Optical transitions in GaN/AlxGa1-xN multiple quantum wells grown by molecular beam epitaxy",

abstract = "Time-resolved photoluminescence was employed to study optical transitions in GaN/AlxGa1-xN multiple quantum wells (MQWs). The effects of quantum confinement on the optical transitions as well as on the exciton-phonon interactions in MQW were investigated. Recombination lifetimes of optical transitions were measured at different emission energies and temperatures from 10 to 300 K. It was found that the exciton recombination lifetime increases linearly with temperature up to 60 K, which is a hallmark of radiative exciton recombination in MQW. Observed optical transitions and their dynamics in GaN/AlxGa1-xN MQW were also compared with those in GaN epilayers and GaAs/AlxGa1-xAs MQW.",

author = "M. Smith and Lin, {J. Y.} and Jiang, {H. X.} and A. Salvador and A. Botchkarev and W. Kim and H. Morkoc",

year = "1996",

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T1 - Optical transitions in GaN/AlxGa1-xN multiple quantum wells grown by molecular beam epitaxy

AU - Smith, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Salvador, A.

AU - Botchkarev, A.

AU - Kim, W.

AU - Morkoc, H.

PY - 1996/10/21

Y1 - 1996/10/21

N2 - Time-resolved photoluminescence was employed to study optical transitions in GaN/AlxGa1-xN multiple quantum wells (MQWs). The effects of quantum confinement on the optical transitions as well as on the exciton-phonon interactions in MQW were investigated. Recombination lifetimes of optical transitions were measured at different emission energies and temperatures from 10 to 300 K. It was found that the exciton recombination lifetime increases linearly with temperature up to 60 K, which is a hallmark of radiative exciton recombination in MQW. Observed optical transitions and their dynamics in GaN/AlxGa1-xN MQW were also compared with those in GaN epilayers and GaAs/AlxGa1-xAs MQW.

AB - Time-resolved photoluminescence was employed to study optical transitions in GaN/AlxGa1-xN multiple quantum wells (MQWs). The effects of quantum confinement on the optical transitions as well as on the exciton-phonon interactions in MQW were investigated. Recombination lifetimes of optical transitions were measured at different emission energies and temperatures from 10 to 300 K. It was found that the exciton recombination lifetime increases linearly with temperature up to 60 K, which is a hallmark of radiative exciton recombination in MQW. Observed optical transitions and their dynamics in GaN/AlxGa1-xN MQW were also compared with those in GaN epilayers and GaAs/AlxGa1-xAs MQW.

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JF - Applied Physics Letters

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Optical transitions in GaN/Al_xGa_1-xN multiple quantum wells grown by molecular beam epitaxy

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