TY - JOUR
T1 - Optical transitions and recombination lifetimes in GaN and InGaN epilayers, and InGaN/GaN and GaN/AlGaN multiple quantum wells
AU - Smith, M.
AU - Lin, J. Y.
AU - Jiang, H. X.
AU - Khan, A.
AU - Chen, Q.
AU - Salvador, A.
AU - Botchkarev, A.
AU - Morhoc, H.
PY - 1997
Y1 - 1997
N2 - Time-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and InxGa1-xN/GaN and GaN/AlxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/AlxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.
AB - Time-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and InxGa1-xN/GaN and GaN/AlxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/AlxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.
UR - http://www.scopus.com/inward/record.url?scp=0030644695&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0030644695
SN - 0272-9172
VL - 449
SP - 829
EP - 834
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Fall Symposium
Y2 - 2 December 1996 through 6 December 1996
ER -