Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells

K. C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoc, M. A. Khan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Fundamental optical transitions in GaN and InGaN epilayers, InGaN/GaN and GaN/AlGaN multiple quantum wells (MQWs) grown both by metal-organic chemical vapor deposition and reactive molecular beam epitaxy have been studied by picosecond time-resolved photoluminescence spectroscopy. The exciton binding energies and radiative recombination lifetimes of the free excitons and bound excitons have been obtained. Effects of well thickness on the optical properties of InxGa1-xN/GaN and GaN/AlxGa1-xN MQWs have also been studied.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages235-238
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: Sep 8 1997Sep 11 1997

Publication series

NameProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Conference

Conference24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period09/8/9709/11/97

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