@inproceedings{550bbd8c064d432b93e807842c8833f1,
title = "Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells",
abstract = "Fundamental optical transitions in GaN and InGaN epilayers, InGaN/GaN and GaN/AlGaN multiple quantum wells (MQWs) grown both by metal-organic chemical vapor deposition and reactive molecular beam epitaxy have been studied by picosecond time-resolved photoluminescence spectroscopy. The exciton binding energies and radiative recombination lifetimes of the free excitons and bound excitons have been obtained. Effects of well thickness on the optical properties of InxGa1-xN/GaN and GaN/AlxGa1-xN MQWs have also been studied.",
author = "Zeng, {K. C.} and M. Smith and Lin, {J. Y.} and Jiang, {H. X.} and A. Salvador and G. Popovici and H. Tang and W. Kim and H. Morkoc and Khan, {M. A.}",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 ; Conference date: 08-09-1997 Through 11-09-1997",
year = "1997",
doi = "10.1109/ISCS.1998.711625",
language = "English",
isbn = "0780338839",
series = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "235--238",
editor = "Mike Melloch and Reed, {Mark A.}",
booktitle = "Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997",
}