Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

M. Nazari; Y. Zhao; Y. Zhu; V. V. Kuryatkov; A. A. Bemussi; Z. Fan; M. Holtz

doi:10.1557/opl.2012.1582

Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

M. Nazari, Y. Zhao, Y. Zhu, V. V. Kuryatkov, A. A. Bemussi, Z. Fan, M. Holtz

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The phase transition of VO₂ grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

Original language	English
Title of host publication	Oxide Semiconductors and Thin Films
Pages	239-244
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1582
State	Published - 2013
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1494
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/25/12 → 11/30/12

Access to Document

10.1557/opl.2012.1582

Cite this

Nazari, M., Zhao, Y., Zhu, Y., Kuryatkov, V. V., Bemussi, A. A., Fan, Z., & Holtz, M. (2013). Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. In Oxide Semiconductors and Thin Films (pp. 239-244). (Materials Research Society Symposium Proceedings; Vol. 1494). https://doi.org/10.1557/opl.2012.1582

@inproceedings{0c98424402e54323aa8359d73ccca756,

title = "Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations",

abstract = "The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.",

author = "M. Nazari and Y. Zhao and Y. Zhu and Kuryatkov, {V. V.} and Bemussi, {A. A.} and Z. Fan and M. Holtz",

year = "2013",

doi = "10.1557/opl.2012.1582",

language = "English",

isbn = "9781605114712",

series = "Materials Research Society Symposium Proceedings",

pages = "239--244",

booktitle = "Oxide Semiconductors and Thin Films",

note = "null ; Conference date: 25-11-2012 Through 30-11-2012",

}

Nazari, M, Zhao, Y, Zhu, Y, Kuryatkov, VV, Bemussi, AA, Fan, Z & Holtz, M 2013, Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. in Oxide Semiconductors and Thin Films. Materials Research Society Symposium Proceedings, vol. 1494, pp. 239-244, 2012 MRS Fall Meeting, Boston, MA, United States, 11/25/12. https://doi.org/10.1557/opl.2012.1582

Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. / Nazari, M.; Zhao, Y.; Zhu, Y.; Kuryatkov, V. V.; Bemussi, A. A.; Fan, Z.; Holtz, M.

Oxide Semiconductors and Thin Films. 2013. p. 239-244 (Materials Research Society Symposium Proceedings; Vol. 1494).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

AU - Nazari, M.

AU - Zhao, Y.

AU - Zhu, Y.

AU - Kuryatkov, V. V.

AU - Bemussi, A. A.

AU - Fan, Z.

AU - Holtz, M.

PY - 2013

Y1 - 2013

N2 - The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

AB - The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

UR - http://www.scopus.com/inward/record.url?scp=84889246766&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1582

DO - 10.1557/opl.2012.1582

M3 - Conference contribution

AN - SCOPUS:84889246766

SN - 9781605114712

T3 - Materials Research Society Symposium Proceedings

SP - 239

EP - 244

BT - Oxide Semiconductors and Thin Films

Y2 - 25 November 2012 through 30 November 2012

ER -

Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this