Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

M. Nazari, Y. Zhao, Y. Zhu, V. V. Kuryatkov, A. A. Bemussi, Z. Fan, M. Holtz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

Original languageEnglish
Title of host publicationOxide Semiconductors and Thin Films
Pages239-244
Number of pages6
DOIs
StatePublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012 → Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1494
ISSN (Print)0272-9172

Conference

Conference2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/25/12 → 11/30/12

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    Nazari, M., Zhao, Y., Zhu, Y., Kuryatkov, V. V., Bemussi, A. A., Fan, Z., & Holtz, M. (2013). Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. In Oxide Semiconductors and Thin Films (pp. 239-244). (Materials Research Society Symposium Proceedings; Vol. 1494). https://doi.org/10.1557/opl.2012.1582