Optical resonant modes in InGaN MQW/GaN micro-cone

Lun Dai, Bei Zhang, Ruo Peng Wang, Jing Yu Lin, Hong Xing Jiang

Research output: Contribution to journalArticlepeer-review

Abstract

Arrays of InGaN MQW/GaN micro-cone cavities with a base diameter of 3.3 μm were fabricated by ion beam etching. The micro-cones consist of a 58 nm thick multiple quantum wells (MQW) of In0.22Ga0.78N/In0.06Ga0.94N as well as a 1.5 μm thick epilayer of GaN. By using a novel optical ray tracing method, we have figured out four main types of optical resonant cavities inside the three-dimensional micro-cone, including two Fabry-Perot modes types as well as two whispering gallery modes types. Optical resonant modes from a single micro-cone could be clearly observed in the photoluminescence spectra at temperature up to 200 K under a pumping power density two orders of magnitude lower than that for the III-nitride semiconductor micro-disk or micro-ring cavity. The corresponding mode spacings of the experimental results agree well with the calculated ones. The advantages of this new class of cavity are discussed. These findings are expected to have impact on the design of the UV/blue micro-cavity laser diodes.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalCurrent Applied Physics
Volume2
Issue number5
DOIs
StatePublished - Oct 2002

Keywords

  • III-nitride semiconductor
  • Micro-cavity
  • Micro-cone
  • Micro-disk
  • Optical resonant modes
  • Photoluminescence spectra

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