Optical Reflectance of bulk AlN Crystals and AlN epitaxial films

L. Chen, B. J. Skromme, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Z. J. Reitmeyer, R. F. Davis, R. F. Dalmau, R. Schlesser, Z. Sitar

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The A exciton feature at 6.025 eV is observed directly in the low temperature (1.8 K) reflectance spectra of AlN for the first time, using a bulk AlN single crystal which has a relatively flat m-face that allows both σ and π configurations. Features involving unresolved B and C excitons are also observed around 6.25 eV from this sample and in three c-oriented MOCVD AlN films. Transmission measurements on the thickest film reveal a clear but weak A excitonic absorption feature at 6.080 eV. The results are explained by theoretical calculations of exciton energies and oscillator strengths. The calculations suggest that AlGaN light-emitting devices will emit light mainly in the π polarization for wavelengths shorter than 320 nm.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages297-298
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period07/26/0407/30/04

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