@inproceedings{b01bfec77e2f43e49290fa57378f9f13,
title = "Optical Reflectance of bulk AlN Crystals and AlN epitaxial films",
abstract = "The A exciton feature at 6.025 eV is observed directly in the low temperature (1.8 K) reflectance spectra of AlN for the first time, using a bulk AlN single crystal which has a relatively flat m-face that allows both σ and π configurations. Features involving unresolved B and C excitons are also observed around 6.25 eV from this sample and in three c-oriented MOCVD AlN films. Transmission measurements on the thickest film reveal a clear but weak A excitonic absorption feature at 6.080 eV. The results are explained by theoretical calculations of exciton energies and oscillator strengths. The calculations suggest that AlGaN light-emitting devices will emit light mainly in the π polarization for wavelengths shorter than 320 nm.",
author = "L. Chen and Skromme, {B. J.} and C. Chen and W. Sun and J. Yang and Khan, {M. A.} and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.} and Reitmeyer, {Z. J.} and Davis, {R. F.} and Dalmau, {R. F.} and R. Schlesser and Z. Sitar",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994108",
language = "English",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "297--298",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}