Optical properties of the nitrogen vacancy in AlN epilayers

N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, J. M. Zavada, R. G. Wilson

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Abstract

Aluminum nitride epilayers grown by metalorganic chemical vapor were implanted with cobalt ions. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The experimentally determine energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. The results indicate that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy.

Original languageEnglish
Pages (from-to)1090-1092
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number7
DOIs
StatePublished - Feb 16 2004

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