Optical properties of the nitrogen vacancy in AlN epilayers

N. Nepal; K. B. Nam; M. L. Nakarmi; J. Y. Lin; H. X. Jiang; J. M. Zavada; R. G. Wilson

doi:10.1063/1.1648137

Optical properties of the nitrogen vacancy in AlN epilayers

N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, J. M. Zavada, R. G. Wilson

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Aluminum nitride epilayers grown by metalorganic chemical vapor were implanted with cobalt ions. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The experimentally determine energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. The results indicate that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy.

Original language	English
Pages (from-to)	1090-1092
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	7
DOIs	https://doi.org/10.1063/1.1648137
State	Published - Feb 16 2004

Access to Document

10.1063/1.1648137

Cite this

@article{4ce0907380cf46ca9f1c65ee89d793d3,

title = "Optical properties of the nitrogen vacancy in AlN epilayers",

abstract = "Aluminum nitride epilayers grown by metalorganic chemical vapor were implanted with cobalt ions. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The experimentally determine energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. The results indicate that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy.",

author = "N. Nepal and Nam, {K. B.} and Nakarmi, {M. L.} and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.} and Wilson, {R. G.}",

year = "2004",

month = feb,

day = "16",

doi = "10.1063/1.1648137",

language = "English",

volume = "84",

pages = "1090--1092",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

number = "7",

}

TY - JOUR

T1 - Optical properties of the nitrogen vacancy in AlN epilayers

AU - Nepal, N.

AU - Nam, K. B.

AU - Nakarmi, M. L.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

AU - Wilson, R. G.

PY - 2004/2/16

Y1 - 2004/2/16

N2 - Aluminum nitride epilayers grown by metalorganic chemical vapor were implanted with cobalt ions. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The experimentally determine energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. The results indicate that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy.

AB - Aluminum nitride epilayers grown by metalorganic chemical vapor were implanted with cobalt ions. Temperature dependence of the PL intensity of the 5.87 eV emission line revealed an ion-implantation induced defect with energy level of about 260 meV below the conduction band. The experimentally determine energy level of the nitrogen vacancy is in reasonable agreement with the calculated value of 300 meV. The results indicate that nitrogen vacancies in AlN cannot make any significant contribution to the n-type conductivity due to the large binding energy as well as the large formation energy.

UR - http://www.scopus.com/inward/record.url?scp=1542469637&partnerID=8YFLogxK

U2 - 10.1063/1.1648137

DO - 10.1063/1.1648137

M3 - Article

AN - SCOPUS:1542469637

SN - 0003-6951

VL - 84

SP - 1090

EP - 1092

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Optical properties of the nitrogen vacancy in AlN epilayers

Abstract

Access to Document

Other files and links

Fingerprint

Cite this