Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Q. Wang, S. Zhao, A. T. Connie, I. Shih, Z. Mi, T. Gonzalez, M. P. Andrews, X. Z. Du, J. Y. Lin, H. X. Jiang

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Abstract

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

Original languageEnglish
Article number223107
JournalApplied Physics Letters
Volume104
Issue number22
DOIs
StatePublished - Jun 2 2014

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