Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Q. Wang; S. Zhao; A. T. Connie; I. Shih; Z. Mi; T. Gonzalez; M. P. Andrews; X. Z. Du; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4881558

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Q. Wang, S. Zhao, A. T. Connie, I. Shih, Z. Mi, T. Gonzalez, M. P. Andrews, X. Z. Du, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

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Abstract

The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

Original language	English
Article number	223107
Journal	Applied Physics Letters
Volume	104
Issue number	22
DOIs	https://doi.org/10.1063/1.4881558
State	Published - Jun 2 2014

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title = "Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates",

abstract = "The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.",

author = "Q. Wang and S. Zhao and Connie, {A. T.} and I. Shih and Z. Mi and T. Gonzalez and Andrews, {M. P.} and Du, {X. Z.} and Lin, {J. Y.} and Jiang, {H. X.}",

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doi = "10.1063/1.4881558",

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T1 - Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

AU - Wang, Q.

AU - Zhao, S.

AU - Connie, A. T.

AU - Shih, I.

AU - Mi, Z.

AU - Gonzalez, T.

AU - Andrews, M. P.

AU - Du, X. Z.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2014/6/2

Y1 - 2014/6/2

N2 - The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

AB - The optical properties of catalyst-free AlN nanowires grown on Si substrates by molecular beam epitaxy were investigated. Such nanowires are nearly free of strain, with strong free exciton emission measured at room temperature. The photoluminescence intensity is significantly enhanced, compared to previously reported AlN epilayer. Moreover, the presence of phonon replicas with an energy separation of ∼100 meV was identified to be associated with the surface-optical phonon rather than the commonly reported longitudinal-optical phonon, which is further supported by the micro-Raman scattering experiments.

UR - http://www.scopus.com/inward/record.url?scp=84902449327&partnerID=8YFLogxK

U2 - 10.1063/1.4881558

DO - 10.1063/1.4881558

M3 - Article

AN - SCOPUS:84902449327

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

M1 - 223107

ER -

Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

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