Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates

H. Morkoc; W. Kim; O. Aktas; A. Salvador; A. Botchkarev; D. C. Reynolds; D. C. Look; M. Smith; G. D. Chen; J. Y. Lin; H. X. Jiang; T. J. Schmidt; X. H. Yang; W. Shan; J. J. Song; al et al

Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates

H. Morkoc, W. Kim, O. Aktas, A. Salvador, A. Botchkarev, D. C. Reynolds, D. C. Look, M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, T. J. Schmidt, X. H. Yang, W. Shan, J. J. Song, al et al

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaN films and GaN/AlGaN heterostructures have been grown by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be approx.90 kW/cm². Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

Original language	English
Pages (from-to)	527-531
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	395
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Cite this

@article{fd3b519c7ce54c0d826873af8af6285d,

title = "Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates",

abstract = "GaN films and GaN/AlGaN heterostructures have been grown by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be approx.90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.",

author = "H. Morkoc and W. Kim and O. Aktas and A. Salvador and A. Botchkarev and Reynolds, {D. C.} and Look, {D. C.} and M. Smith and Chen, {G. D.} and Lin, {J. Y.} and Jiang, {H. X.} and Schmidt, {T. J.} and Yang, {X. H.} and W. Shan and Song, {J. J.} and {et al}, al",

year = "1996",

language = "English",

volume = "395",

pages = "527--531",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "null ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates

AU - Morkoc, H.

AU - Kim, W.

AU - Aktas, O.

AU - Salvador, A.

AU - Botchkarev, A.

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Smith, M.

AU - Chen, G. D.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Schmidt, T. J.

AU - Yang, X. H.

AU - Shan, W.

AU - Song, J. J.

AU - et al, al

PY - 1996

Y1 - 1996

N2 - GaN films and GaN/AlGaN heterostructures have been grown by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be approx.90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

AB - GaN films and GaN/AlGaN heterostructures have been grown by MBE. GaN films doped with varying levels of Mg indicate effective mass acceptor at low doping concentrations, as determined from strong photoluminescence emission at about 380 nm. As the Mg concentration is increased the photoluminescence emission line red shifts considerably, indicating the formation of Mg-related or induced complexes whose lifetimes are relatively short. GaN/AlGaN separate confinement heterostructures grown on sapphire show strong near ultraviolet stimulated emission at room temperature in a side-pumping configuration. The pumping threshold for stimulated emission at room temperature was found to be approx.90 kW/cm2. Initial GaN films grown on ZnO substrates show the A exciton in low temperature photoluminescence. ZnO is being considered for nitride growth because of its stacking order and close lattice match.

UR - http://www.scopus.com/inward/record.url?scp=0029751021&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029751021

SN - 0272-9172

VL - 395

SP - 527

EP - 531

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 26 November 1995 through 1 December 1995

ER -

Optical properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO substrates

Abstract

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