The optical properties of III-nitride microstructures fabricated by dry etching from GaN/AlGaN and InGaN/GaN multiple quantum well (MQW) structures were studied. With respect ot the original MQW, the intrinsic transitions from both the wells and barriers exhibit an approximate 10-fold increase in both recombination lifetime and quantum efficiency upon formation of microstructures. Optical modes of the whispering-gallery and radial type are observed in individually pumped III-nitride MQW microdisks, but only the WG modes are present in individually pumped III-nitride microrings. Self-organized microcavities formed by selective epitaxial overgrowth can be further developed for the realization of GaN microcavity light emitters with high quality facets.
|Number of pages||14|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1999|
|Event||Proceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA|
Duration: Jan 25 1999 → Jan 29 1999