Optical properties of III-nitride microcavities

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The optical properties of III-nitride microstructures fabricated by dry etching from GaN/AlGaN and InGaN/GaN multiple quantum well (MQW) structures were studied. With respect ot the original MQW, the intrinsic transitions from both the wells and barriers exhibit an approximate 10-fold increase in both recombination lifetime and quantum efficiency upon formation of microstructures. Optical modes of the whispering-gallery and radial type are observed in individually pumped III-nitride MQW microdisks, but only the WG modes are present in individually pumped III-nitride microrings. Self-organized microcavities formed by selective epitaxial overgrowth can be further developed for the realization of GaN microcavity light emitters with high quality facets.

Original languageEnglish
Pages (from-to)608-621
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1999
EventProceedings of the 1999 Physics and Simulation of Optoelectronic Devices VII - San Jose, CA, USA
Duration: Jan 25 1999Jan 29 1999


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