Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

A. S. Zubrilov; S. A. Nikishin; G. D. Kipshidze; V. V. Kuryatkov; H. Temkin; T. I. Prokofyeva; M. Holtz

doi:10.1063/1.1430535

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

A. S. Zubrilov, S. A. Nikishin, G. D. Kipshidze, V. V. Kuryatkov, H. Temkin, T. I. Prokofyeva, M. Holtz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77-495 K for samples with low background carrier concentrations, as determined by capacitance voltage profiling and Raman spectroscopy, and the results were fitted using Passler's and Varshni's models. We also demonstrate strong correlation between electron concentration in GaN and relative Raman intensity of A ₁ (longitudinal optical) and E ₂ ² modes. The binding energy of free excitons is estimated to be 29±2meV. The contributions of different mechanisms to free exciton line broadening are discussed.

Original language	English
Pages (from-to)	1209-1212
Number of pages	4
Journal	Journal of Applied Physics
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.1430535
State	Published - Feb 1 2002

Access to Document

10.1063/1.1430535

Cite this

@article{4daaae419eb5444cb24f1b0a400d6b01,

title = "Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia",

abstract = "We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77-495 K for samples with low background carrier concentrations, as determined by capacitance voltage profiling and Raman spectroscopy, and the results were fitted using Passler's and Varshni's models. We also demonstrate strong correlation between electron concentration in GaN and relative Raman intensity of A 1 (longitudinal optical) and E 2 2 modes. The binding energy of free excitons is estimated to be 29±2meV. The contributions of different mechanisms to free exciton line broadening are discussed.",

author = "Zubrilov, {A. S.} and Nikishin, {S. A.} and Kipshidze, {G. D.} and Kuryatkov, {V. V.} and H. Temkin and Prokofyeva, {T. I.} and M. Holtz",

year = "2002",

month = feb,

day = "1",

doi = "10.1063/1.1430535",

language = "English",

volume = "91",

pages = "1209--1212",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "3",

}

TY - JOUR

T1 - Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

AU - Zubrilov, A. S.

AU - Nikishin, S. A.

AU - Kipshidze, G. D.

AU - Kuryatkov, V. V.

AU - Temkin, H.

AU - Prokofyeva, T. I.

AU - Holtz, M.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77-495 K for samples with low background carrier concentrations, as determined by capacitance voltage profiling and Raman spectroscopy, and the results were fitted using Passler's and Varshni's models. We also demonstrate strong correlation between electron concentration in GaN and relative Raman intensity of A 1 (longitudinal optical) and E 2 2 modes. The binding energy of free excitons is estimated to be 29±2meV. The contributions of different mechanisms to free exciton line broadening are discussed.

AB - We report a study of the optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia. Temperature dependence of edge luminescence was studied in the range of 77-495 K for samples with low background carrier concentrations, as determined by capacitance voltage profiling and Raman spectroscopy, and the results were fitted using Passler's and Varshni's models. We also demonstrate strong correlation between electron concentration in GaN and relative Raman intensity of A 1 (longitudinal optical) and E 2 2 modes. The binding energy of free excitons is estimated to be 29±2meV. The contributions of different mechanisms to free exciton line broadening are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0036470593&partnerID=8YFLogxK

U2 - 10.1063/1.1430535

DO - 10.1063/1.1430535

M3 - Article

AN - SCOPUS:0036470593

SN - 0021-8979

VL - 91

SP - 1209

EP - 1212

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Abstract

Access to Document

Other files and links

Fingerprint

Cite this