Optical properties of a high-quality insulating GaN epilayer

K. C. Zeng, J. Y. Lin, H. X. Jiang, Wei Yang

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The picosecond time-resolved photoluminescence spectra of a high quality insulating wurtzite GaN semiconductor was investigated under a low excitation intensity at temperatures from 8.7 to 50 K. The sample was grown via metallorganic chemical vapor deposition (MOCVD) on a sapphire substrate at 76 Torr. Resolutions of transmission lines with peak positions at 3.503 and 3.512 eV were assigned to the band-to-band transitions of A- and B- valence bands, respectively. Least-squares fitting of data showed a PL decay with a lifetime of about 3.7 ns and the total impurity concentration was found to be smaller with the insulating sample.

Original languageEnglish
Pages (from-to)3821-3823
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number25
DOIs
StatePublished - Jun 21 1999

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