Optical properties of a high-quality insulating GaN epilayer

K. C. Zeng; J. Y. Lin; H. X. Jiang; Wei Yang

doi:10.1063/1.124191

Optical properties of a high-quality insulating GaN epilayer

K. C. Zeng, J. Y. Lin, H. X. Jiang, Wei Yang

Electrical and Computer Engineering

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17 Scopus citations

Abstract

The picosecond time-resolved photoluminescence spectra of a high quality insulating wurtzite GaN semiconductor was investigated under a low excitation intensity at temperatures from 8.7 to 50 K. The sample was grown via metallorganic chemical vapor deposition (MOCVD) on a sapphire substrate at 76 Torr. Resolutions of transmission lines with peak positions at 3.503 and 3.512 eV were assigned to the band-to-band transitions of A- and B- valence bands, respectively. Least-squares fitting of data showed a PL decay with a lifetime of about 3.7 ns and the total impurity concentration was found to be smaller with the insulating sample.

Original language	English
Pages (from-to)	3821-3823
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	25
DOIs	https://doi.org/10.1063/1.124191
State	Published - Jun 21 1999

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@article{f3f202a5601146ab8be7f9c087e410dc,

title = "Optical properties of a high-quality insulating GaN epilayer",

abstract = "The picosecond time-resolved photoluminescence spectra of a high quality insulating wurtzite GaN semiconductor was investigated under a low excitation intensity at temperatures from 8.7 to 50 K. The sample was grown via metallorganic chemical vapor deposition (MOCVD) on a sapphire substrate at 76 Torr. Resolutions of transmission lines with peak positions at 3.503 and 3.512 eV were assigned to the band-to-band transitions of A- and B- valence bands, respectively. Least-squares fitting of data showed a PL decay with a lifetime of about 3.7 ns and the total impurity concentration was found to be smaller with the insulating sample.",

author = "Zeng, {K. C.} and Lin, {J. Y.} and Jiang, {H. X.} and Wei Yang",

year = "1999",

month = jun,

day = "21",

doi = "10.1063/1.124191",

language = "English",

volume = "74",

pages = "3821--3823",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "25",

}

TY - JOUR

T1 - Optical properties of a high-quality insulating GaN epilayer

AU - Zeng, K. C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Yang, Wei

PY - 1999/6/21

Y1 - 1999/6/21

N2 - The picosecond time-resolved photoluminescence spectra of a high quality insulating wurtzite GaN semiconductor was investigated under a low excitation intensity at temperatures from 8.7 to 50 K. The sample was grown via metallorganic chemical vapor deposition (MOCVD) on a sapphire substrate at 76 Torr. Resolutions of transmission lines with peak positions at 3.503 and 3.512 eV were assigned to the band-to-band transitions of A- and B- valence bands, respectively. Least-squares fitting of data showed a PL decay with a lifetime of about 3.7 ns and the total impurity concentration was found to be smaller with the insulating sample.

AB - The picosecond time-resolved photoluminescence spectra of a high quality insulating wurtzite GaN semiconductor was investigated under a low excitation intensity at temperatures from 8.7 to 50 K. The sample was grown via metallorganic chemical vapor deposition (MOCVD) on a sapphire substrate at 76 Torr. Resolutions of transmission lines with peak positions at 3.503 and 3.512 eV were assigned to the band-to-band transitions of A- and B- valence bands, respectively. Least-squares fitting of data showed a PL decay with a lifetime of about 3.7 ns and the total impurity concentration was found to be smaller with the insulating sample.

UR - http://www.scopus.com/inward/record.url?scp=0032607007&partnerID=8YFLogxK

U2 - 10.1063/1.124191

DO - 10.1063/1.124191

M3 - Article

AN - SCOPUS:0032607007

SN - 0003-6951

VL - 74

SP - 3821

EP - 3823

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Optical properties of a high-quality insulating GaN epilayer

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