Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Lun Dai; Bei Zhang; R. A. Mair; Kecai Zeng; Jinyu Lin; Hongxing Jigang; A. Botchkarev; W. Kim; H. Morkoc; M. A. Khan

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Lun Dai, Bei Zhang, R. A. Mair, Kecai Zeng, Jinyu Lin, Hongxing Jigang, A. Botchkarev, W. Kim, H. Morkoc, M. A. Khan

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/Al_xGa_1-xN (x to approximately 0.07) and 45 angstroms/45 angstroms In_xGa_1-xN/GaN (x to approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering gallery mode with a spacing of 15-16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

Original language	English
Pages (from-to)	158-163
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3547
State	Published - 1998
Event	Proceedings of the 1998 Conference on Semiconductor Lasers III - Beijing, China Duration: Sep 16 1998 → Sep 18 1998

Cite this

@article{f03451fcc37c414ebb2cdc1303de2b8d,

title = "Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities",

abstract = "Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x to approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x to approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering gallery mode with a spacing of 15-16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.",

author = "Lun Dai and Bei Zhang and Mair, {R. A.} and Kecai Zeng and Jinyu Lin and Hongxing Jigang and A. Botchkarev and W. Kim and H. Morkoc and Khan, {M. A.}",

year = "1998",

language = "English",

volume = "3547",

pages = "158--163",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Proceedings of the 1998 Conference on Semiconductor Lasers III ; Conference date: 16-09-1998 Through 18-09-1998",

}

TY - JOUR

T1 - Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

AU - Dai, Lun

AU - Zhang, Bei

AU - Mair, R. A.

AU - Zeng, Kecai

AU - Lin, Jinyu

AU - Jigang, Hongxing

AU - Botchkarev, A.

AU - Kim, W.

AU - Morkoc, H.

AU - Khan, M. A.

PY - 1998

Y1 - 1998

N2 - Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x to approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x to approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering gallery mode with a spacing of 15-16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

AB - Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x to approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x to approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering gallery mode with a spacing of 15-16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0032293124&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032293124

SN - 0277-786X

VL - 3547

SP - 158

EP - 163

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Semiconductor Lasers III

Y2 - 16 September 1998 through 18 September 1998

ER -

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

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