Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Lun Dai, Bei Zhang, R. A. Mair, Kecai Zeng, Jinyu Lin, Hongxing Jigang, A. Botchkarev, W. Kim, H. Morkoc, M. A. Khan

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Abstract

Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 50 angstroms/50 angstroms GaN/AlxGa1-xN (x to approximately 0.07) and 45 angstroms/45 angstroms InxGa1-xN/GaN (x to approximately 0.15) multiple quantum well structures. Microdisks, approximately 9 μm in diameter and regularly spaced every 50 μm, were formed by ion beam etch process. Individual disk was pumped from 10 K to 300 K with 290 nm laser pulses focused to a spot size much smaller than the disk diameter. Optical properties of these microdisks have been studied by picosecond time-resolved photoluminescence (PL) spectroscopy. From cw PL emission spectra, optical modes corresponding to (i) the radial mode type with a spacing of 49-51 meV (both TE and TM) and (ii) the Whispering gallery mode with a spacing of 15-16 meV were observed in the GaN-based microdisk cavities. The spacings of these modes are consistent with theoretical calculation. The implications of our results to III-Nitride microdisk lasers are discussed.

Original languageEnglish
Pages (from-to)158-163
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3547
StatePublished - 1998
EventProceedings of the 1998 Conference on Semiconductor Lasers III - Beijing, China
Duration: Sep 16 1998Sep 18 1998

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    Dai, L., Zhang, B., Mair, R. A., Zeng, K., Lin, J., Jigang, H., Botchkarev, A., Kim, W., Morkoc, H., & Khan, M. A. (1998). Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities. Proceedings of SPIE - The International Society for Optical Engineering, 3547, 158-163.