Optical polarization in c-plane Al-rich AlN/Al xGa 1-xN single quantum wells

T. M. Al Tahtamouni; J. Y. Lin; H. X. Jiang

doi:10.1063/1.4737941

Optical polarization in c-plane Al-rich AlN/Al _xGa _1-xN single quantum wells

T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

The optical polarization of AlN/Al _xGa _1-xN single quantum wells (x 0.65) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E c to E c at a well width around 2 nm. The emission intensity with polarization of E c and the degree of polarization were found to decrease with increasing well width. The emission intensity with polarization of E c was found to increase with increasing well width.

Original language	English
Article number	042103
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4737941
State	Published - Jul 23 2012

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title = "Optical polarization in c-plane Al-rich AlN/Al xGa 1-xN single quantum wells",

abstract = "The optical polarization of AlN/Al xGa 1-xN single quantum wells (x 0.65) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E c to E c at a well width around 2 nm. The emission intensity with polarization of E c and the degree of polarization were found to decrease with increasing well width. The emission intensity with polarization of E c was found to increase with increasing well width.",

author = "{Al Tahtamouni}, {T. M.} and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: TTU{\textquoteright}s work is partly supported by DOE (DE-FG02-09ER46552)",

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AU - Al Tahtamouni, T. M.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: TTU’s work is partly supported by DOE (DE-FG02-09ER46552)

PY - 2012/7/23

Y1 - 2012/7/23

N2 - The optical polarization of AlN/Al xGa 1-xN single quantum wells (x 0.65) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E c to E c at a well width around 2 nm. The emission intensity with polarization of E c and the degree of polarization were found to decrease with increasing well width. The emission intensity with polarization of E c was found to increase with increasing well width.

AB - The optical polarization of AlN/Al xGa 1-xN single quantum wells (x 0.65) has been studied by means of photoluminescence (PL) spectroscopy. The predominant polarization component of the band-edge PL switched from E c to E c at a well width around 2 nm. The emission intensity with polarization of E c and the degree of polarization were found to decrease with increasing well width. The emission intensity with polarization of E c was found to increase with increasing well width.

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Optical polarization in c-plane Al-rich AlN/Al _xGa _1-xN single quantum wells

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