Optical excitation of Er centers in GaN epilayers grown by MOCVD

D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, N. Q. Vinh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this paper we present results of photoluminescence (PL), photoluminescence excitation (PLE), and time resolved PL spectroscopy of the 4I13/2 '†' 4I15/2 transition in Er optical centers in GaN epilayers grown by metal-organic chemical vapor deposition. Under resonance excitation via the higher-lying inner 4f shell transitions and band-to-band excitation of the semiconductor host, the PL and PLE spectra reveal an existence of two types of Er optical centers from isolated and the defect-related Er centers in GaN epilayers. These centers have different PL spectra, local defect environments, decay dynamics, and excitation cross-sections. The isolated Er optical center, which can be excited by either excitation mechanism, has the same decay dynamics, but possesses a much higher cross-section under band-to-band excitation. In contrast, the defect-related Er center can only be observed through band-to-band excitation but has the largest crosssection. Our results indicate pathways for efficient optical excitation of Er-doped GaN semiconductors.

Original languageEnglish
Title of host publicationOptical Components and Materials XIII
EditorsShibin Jiang, Michel J. F. Digonnet
ISBN (Electronic)9781628419795
StatePublished - 2016
EventOptical Components and Materials XIII - San Francisco, United States
Duration: Feb 15 2016Feb 17 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceOptical Components and Materials XIII
Country/TerritoryUnited States
CitySan Francisco


  • Erbium
  • Excitation mechanisms
  • GaN
  • Photoluminescence spectra


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