Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

N. Nepal; J. M. Zavada; R. Dahal; C. Ugolini; A. Sedhain; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3176972

Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

N. Nepal, J. M. Zavada, R. Dahal, C. Ugolini, A. Sedhain, J. Y. Lin, H. X. Jiang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼ 1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%-25% indicating possible device applications.

Original language	English
Article number	022510
Journal	Applied Physics Letters
Volume	95
Issue number	2
DOIs	https://doi.org/10.1063/1.3176972
State	Published - 2009

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title = "Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers",

abstract = "We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼ 1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%-25% indicating possible device applications.",

author = "N. Nepal and Zavada, {J. M.} and R. Dahal and C. Ugolini and A. Sedhain and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: The authors thank Dr. N. El-Masry for her helpful comments concerning this work, which was performed under grants from the U.S. Army Research Office (Grant No. W911NF-06-1-0134) and the National Science Foundation (Grant No. EECS-0823894). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre endowed chair positions through the AT&T Foundation. ",

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doi = "10.1063/1.3176972",

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volume = "95",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

AU - Nepal, N.

AU - Zavada, J. M.

AU - Dahal, R.

AU - Ugolini, C.

AU - Sedhain, A.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: The authors thank Dr. N. El-Masry for her helpful comments concerning this work, which was performed under grants from the U.S. Army Research Office (Grant No. W911NF-06-1-0134) and the National Science Foundation (Grant No. EECS-0823894). J.Y.L. and H.X.J. gratefully acknowledge the support of the Linda Whitacre and Edward Whitacre endowed chair positions through the AT&T Foundation.

PY - 2009

Y1 - 2009

N2 - We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼ 1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%-25% indicating possible device applications.

AB - We report on the enhancement of magnetic properties of Er-doped GaN epilayer structures, grown by metal-organic chemical vapor deposition, with illumination from a light emitting diode. Single and multiple Er-doped epilayers were grown with Er concentrations up to ∼ 1021 cm-3. All samples exhibited hysteresis behavior at room temperature as measured by an alternating gradient magnetometer. When the samples were illuminated at a wavelength of 371 nm, an increase in saturation magnetization was observed for each sample. The percentage increase for multiple layer samples ranged from 10%-25% indicating possible device applications.

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U2 - 10.1063/1.3176972

DO - 10.1063/1.3176972

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VL - 95

JO - Applied Physics Letters

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Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers

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