A1xGa1-xN alloys with x varied from 0 to 0.35 have been produced on sapphire substrates with GaN buffer layers by using metalorganic chemical vapor deposition (MOCVD), and the optical properties of the AlxGa1-xN alloys have been investigated using picosecond time-resolved photoluminescence (PL) spectroscopy at low temperature (10 K). Our results reveal that the PL intensity decreases with increasing of Al content. On the other hand, the PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states (DOS) due to alloy fluctuation in the AlxGa1-xN alloys. The Al content dependence of the energy tail-state distribution parameter, E0, which is an important parameter for determining the optical and the electrical properties of the AlGaN alloys, has been obtained experimentally.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|State||Published - Oct 2000|