TY - GEN
T1 - Optical and magneto-optical properties of neodymium and erbium doped gallium nitride epilayers
AU - Woodward, N.
AU - Jiang, H. X.
AU - Lin, J. Y.
AU - Zavada, J. M.
AU - Readinger, E.
AU - Dierolf, V.
PY - 2011
Y1 - 2011
N2 - Following the commercial availability of high power III-nitride light emitting diodes in the 370-540 nm range, a strong desire for efficient rare earth-doped (In)GaN epilayers has developed to produce light source and electrically pumped optical amplifiers in the visible and IR spectral region. To this end, Er-doped GaN epilayers have been grown by OVMPE with excellent crystal quality [1]. Similar success has been achieved with in-situ doped Nd:GaN samples grown by plasma-assisted MBE [2]. For each dopant, we have studied site-selective emission spectroscopy using combined excitation-emission spectroscopy (CEES) to give important insight for the optimization of the growth conditions. Aside from application in novel light sources, there has been an increasing interest in the magnetic properties of the dilute RE-dopants, which are found to introduce ferromagnetism to the GaN host [3] enabling the realization of spin-memory based on this class of material [4].
AB - Following the commercial availability of high power III-nitride light emitting diodes in the 370-540 nm range, a strong desire for efficient rare earth-doped (In)GaN epilayers has developed to produce light source and electrically pumped optical amplifiers in the visible and IR spectral region. To this end, Er-doped GaN epilayers have been grown by OVMPE with excellent crystal quality [1]. Similar success has been achieved with in-situ doped Nd:GaN samples grown by plasma-assisted MBE [2]. For each dopant, we have studied site-selective emission spectroscopy using combined excitation-emission spectroscopy (CEES) to give important insight for the optimization of the growth conditions. Aside from application in novel light sources, there has been an increasing interest in the magnetic properties of the dilute RE-dopants, which are found to introduce ferromagnetism to the GaN host [3] enabling the realization of spin-memory based on this class of material [4].
UR - http://www.scopus.com/inward/record.url?scp=80052300631&partnerID=8YFLogxK
U2 - 10.1109/CLEOE.2011.5942788
DO - 10.1109/CLEOE.2011.5942788
M3 - Conference contribution
AN - SCOPUS:80052300631
SN - 9781457705335
T3 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
BT - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
T2 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
Y2 - 22 May 2011 through 26 May 2011
ER -