Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

N. Woodward; V. Dierolf; J. Y. Lin; H. X. Jiang; J. M. Zavada

doi:10.1016/j.optmat.2010.07.007

Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

N. Woodward, V. Dierolf, J. Y. Lin, H. X. Jiang, J. M. Zavada

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Using combined excitation-emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared them to samples grown by MBE. A smaller up-conversion efficiency for the main site is observed compared to minority sites in the same sample as well as versus all sites from MBE grown samples. Furthermore, we show that the 1.54 μm emission efficiency is reduced with increasing In-content both under excitation above the bandgap in the UV as well as under resonant excitation at around 980 nm. This indicates that non-radiative decay channels for the Er ion are the largest contributing factor for this behavior. Finally, the Zeeman splitting of the excitation and emission lines of Er:GaN under application of magnetic fields up to 6.6 T with B||c-axis is shown.

Original language	English
Pages (from-to)	1059-1062
Number of pages	4
Journal	Optical Materials
Volume	33
Issue number	7
DOIs	https://doi.org/10.1016/j.optmat.2010.07.007
State	Published - May 2011

Keywords

Luminescence
Rare earth
Zeeman splitting

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10.1016/j.optmat.2010.07.007

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title = "Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers",

abstract = "Using combined excitation-emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared them to samples grown by MBE. A smaller up-conversion efficiency for the main site is observed compared to minority sites in the same sample as well as versus all sites from MBE grown samples. Furthermore, we show that the 1.54 μm emission efficiency is reduced with increasing In-content both under excitation above the bandgap in the UV as well as under resonant excitation at around 980 nm. This indicates that non-radiative decay channels for the Er ion are the largest contributing factor for this behavior. Finally, the Zeeman splitting of the excitation and emission lines of Er:GaN under application of magnetic fields up to 6.6 T with B||c-axis is shown.",

keywords = "Luminescence, Rare earth, Zeeman splitting",

author = "N. Woodward and V. Dierolf and Lin, {J. Y.} and Jiang, {H. X.} and Zavada, {J. M.}",

note = "Funding Information: This work is supported by NSF (Grant No: DMR 0705217 and ECCS-0823894 ) and ARO (Grant No: W911NF-09–1-0277 ). H.X. Jiang and J.Y. Lin would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowed chairs through the AT&T foundation.",

year = "2011",

month = may,

doi = "10.1016/j.optmat.2010.07.007",

language = "English",

volume = "33",

pages = "1059--1062",

journal = "Optical Materials",

issn = "0925-3467",

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TY - JOUR

T1 - Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

AU - Woodward, N.

AU - Dierolf, V.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Zavada, J. M.

N1 - Funding Information: This work is supported by NSF (Grant No: DMR 0705217 and ECCS-0823894 ) and ARO (Grant No: W911NF-09–1-0277 ). H.X. Jiang and J.Y. Lin would like to acknowledge the support of Edward Whitacre and Linda Whitacre endowed chairs through the AT&T foundation.

PY - 2011/5

Y1 - 2011/5

N2 - Using combined excitation-emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared them to samples grown by MBE. A smaller up-conversion efficiency for the main site is observed compared to minority sites in the same sample as well as versus all sites from MBE grown samples. Furthermore, we show that the 1.54 μm emission efficiency is reduced with increasing In-content both under excitation above the bandgap in the UV as well as under resonant excitation at around 980 nm. This indicates that non-radiative decay channels for the Er ion are the largest contributing factor for this behavior. Finally, the Zeeman splitting of the excitation and emission lines of Er:GaN under application of magnetic fields up to 6.6 T with B||c-axis is shown.

AB - Using combined excitation-emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared them to samples grown by MBE. A smaller up-conversion efficiency for the main site is observed compared to minority sites in the same sample as well as versus all sites from MBE grown samples. Furthermore, we show that the 1.54 μm emission efficiency is reduced with increasing In-content both under excitation above the bandgap in the UV as well as under resonant excitation at around 980 nm. This indicates that non-radiative decay channels for the Er ion are the largest contributing factor for this behavior. Finally, the Zeeman splitting of the excitation and emission lines of Er:GaN under application of magnetic fields up to 6.6 T with B||c-axis is shown.

KW - Luminescence

KW - Rare earth

KW - Zeeman splitting

UR - http://www.scopus.com/inward/record.url?scp=79955546730&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2010.07.007

DO - 10.1016/j.optmat.2010.07.007

M3 - Article

AN - SCOPUS:79955546730

SN - 0925-3467

VL - 33

SP - 1059

EP - 1062

JO - Optical Materials

JF - Optical Materials

IS - 7

ER -

Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers

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Keywords

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