Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

J. M. Zavada; N. Nepal; C. Ugolini; J. Y. Lin; H. X. Jiang; R. Davies; J. Hite; C. R. Abernathy; S. J. Pearton; E. E. Brown; U. Hömmerich

doi:10.1063/1.2767992

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

J. M. Zavada, N. Nepal, C. Ugolini, J. Y. Lin, H. X. Jiang, R. Davies, J. Hite, C. R. Abernathy, S. J. Pearton, E. E. Brown, U. Hömmerich

Electrical and Computer Engineering

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Abstract

The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ∼ 1021 cm-3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.

Original language	English
Article number	054106
Journal	Applied Physics Letters
Volume	91
Issue number	5
DOIs	https://doi.org/10.1063/1.2767992
State	Published - 2007

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@article{1a073a6cf01e4c81a1e26d08b73b8932,

title = "Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition",

abstract = "The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ∼ 1021 cm-3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.",

author = "Zavada, {J. M.} and N. Nepal and C. Ugolini and Lin, {J. Y.} and Jiang, {H. X.} and R. Davies and J. Hite and Abernathy, {C. R.} and Pearton, {S. J.} and Brown, {E. E.} and U. H{\"o}mmerich",

note = "Funding Information: The authors gratefully acknowledge the U.S. Army Research Office for support of portions of this work. ",

year = "2007",

doi = "10.1063/1.2767992",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AIP Publishing",

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TY - JOUR

T1 - Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

AU - Zavada, J. M.

AU - Nepal, N.

AU - Ugolini, C.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Davies, R.

AU - Hite, J.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Brown, E. E.

AU - Hömmerich, U.

N1 - Funding Information: The authors gratefully acknowledge the U.S. Army Research Office for support of portions of this work.

PY - 2007

Y1 - 2007

N2 - The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ∼ 1021 cm-3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.

AB - The authors report on the optical and magnetic properties of GaN epilayers, grown by metal-organic chemical vapor deposition, with in situ Er doping at concentrations up to ∼ 1021 cm-3. Using ultraviolet laser excitation, all samples exhibited photoluminescence near 1540 nm with the integrated intensity approximately proportional to the Er concentration. Data from superconducting quantum interference device measurements indicated room temperature ferromagnetic ordering in all Er-doped GaN epilayers. The saturation magnetization in these samples also followed a nearly linear fit to the Er concentration. X-ray diffraction spectra did not reveal evidence of any second phases over this range of Er concentrations.

UR - http://www.scopus.com/inward/record.url?scp=34547701962&partnerID=8YFLogxK

U2 - 10.1063/1.2767992

DO - 10.1063/1.2767992

M3 - Article

AN - SCOPUS:34547701962

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 054106

ER -

Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition

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