Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy

Ashfiqua Tahseen Connie, Songrui Zhao, Sharif Md Sadaf, Ishiang Shih, Zetian Mi, Xiaozhang Du, Jingyu Lin, Hongxing Jiang

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37 Scopus citations

Abstract

In this paper, the optical and electrical properties of Mg-doped AlN nanowires are discussed. At room temperature, with the increase of Mg-doping concentration, the Mg-acceptor energy level related optical transition can be clearly measured, which is separated about 0.6 eV from the band-edge transition, consistent with the Mg activation energy in AlN. The electrical conduction measurements indicate an activation energy of 23 meV at 300 K-450 K temperature range, which is significantly smaller than the Mg-ionization energy in AlN, suggesting the p-type conduction being mostly related to hopping conduction. The free hole concentration of AlN:Mg nanowires is estimated to be on the order of 1016cm-3, or higher.

Original languageEnglish
Article number213105
JournalApplied Physics Letters
Volume106
Issue number21
DOIs
StatePublished - May 25 2015

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