Optical and electrical properties of Al-rich AlGaN alloys

J. Li; K. B. Nam; J. Y. Lin; H. X. Jiang

doi:10.1063/1.1418255

Optical and electrical properties of Al-rich AlGaN alloys

J. Li, K. B. Nam, J. Y. Lin, H. X. Jiang

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Abstract

Al_xGa_{1 - x}N alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results.

Original language	English
Pages (from-to)	3245-3247
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	20
DOIs	https://doi.org/10.1063/1.1418255
State	Published - Nov 12 2001

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title = "Optical and electrical properties of Al-rich AlGaN alloys",

abstract = "AlxGa1 - xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results.",

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AU - Li, J.

AU - Nam, K. B.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2001/11/12

Y1 - 2001/11/12

N2 - AlxGa1 - xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results.

AB - AlxGa1 - xN alloys with x up to 0.7 were grown by metalorganic chemical vapor deposition and their optical properties were investigated by deep UV time-resolved photoluminescence (PL) spectroscopy. Our results revealed that both the activation energy of the PL emission intensity and the PL decay lifetime exhibit sharp increases at x of around 0.4. The results can be understood in terms of the sharp increase of the impurity binding energy or the carrier/exciton localization energy around x=0.4. A three orders of magnitude increase in resistivity of undoped AlGaN alloys at x of around 0.4 was also observed, which further corroborated the optical results.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical and electrical properties of Al-rich AlGaN alloys

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