Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference

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Abstract

Presented is a gain-boosted gate-bulk-driven error correction amplifier with reduced offset errors for low-voltage sub-bandgap reference designs. The method can be applied to sub-bandgap circuits with BJT diodes, subthreshold MOSFETs or Schottky barrier diodes. Detailed analysis and circuit implementation are presented. Low voltage operation has been verified over-55 to 125 °C. Simulation and measurement results demonstrate the minimised offset error and improved supply sensitivity, which indicates the effectiveness of the proposed gain boosting mechanism.

Original languageEnglish
Pages (from-to)694-696
Number of pages3
JournalElectronics Letters
Volume49
Issue number11
DOIs
StatePublished - May 23 2013

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