Abstract
Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm-1) observed at around 841 cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.
Original language | English |
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Pages (from-to) | 2889-2891 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 20 |
DOIs | |
State | Published - May 15 2000 |