Observation of electronic Raman scattering from Mg-doped wurtzite GaN

K. T. Tsen, C. Koch, Y. Chen, H. Morkoc, J. Li, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm-1) observed at around 841 cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.

Original languageEnglish
Pages (from-to)2889-2891
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number20
DOIs
StatePublished - May 15 2000

Fingerprint Dive into the research topics of 'Observation of electronic Raman scattering from Mg-doped wurtzite GaN'. Together they form a unique fingerprint.

Cite this