Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications

Animesh R. Chowdhury, Ravi P. Joshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.

Original languageEnglish
Title of host publication2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages191-194
Number of pages4
ISBN (Electronic)9781538654538
DOIs
StatePublished - Jun 2018
Event2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 - Jackson, United States
Duration: Jun 3 2018Jun 7 2018

Publication series

Name2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018

Conference

Conference2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
CountryUnited States
CityJackson
Period06/3/1806/7/18

Keywords

  • Lock-On
  • photoconductive switch
  • pulsed power application
  • semi-insulating semiconductors

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