Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications

Animesh R. Chowdhury; Ravi P. Joshi

doi:10.1109/IPMHVC.2018.8936791

Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications

Animesh R. Chowdhury, Ravi P. Joshi

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.

Original language	English
Title of host publication	2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	191-194
Number of pages	4
ISBN (Electronic)	9781538654538
DOIs	https://doi.org/10.1109/IPMHVC.2018.8936791
State	Published - Jun 2018
Event	2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 - Jackson, United States Duration: Jun 3 2018 → Jun 7 2018

Publication series

Name	2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018

Conference

Conference	2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
Country/Territory	United States
City	Jackson
Period	06/3/18 → 06/7/18

Keywords

Lock-On
photoconductive switch
pulsed power application
semi-insulating semiconductors

Access to Document

10.1109/IPMHVC.2018.8936791

Cite this

Chowdhury, A. R., & Joshi, R. P. (2018). Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications. In 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018 (pp. 191-194). [8936791] (2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPMHVC.2018.8936791

Chowdhury, Animesh R. ; Joshi, Ravi P. / Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications. 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 191-194 (2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018).

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title = "Numerical Studies into the Possibility of {"}lock-On{"} in a GaN Photoconductive Switch for High Power Applications",

abstract = "Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.",

keywords = "Lock-On, photoconductive switch, pulsed power application, semi-insulating semiconductors",

author = "Chowdhury, {Animesh R.} and Joshi, {Ravi P.}",

year = "2018",

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series = "2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "null ; Conference date: 03-06-2018 Through 07-06-2018",

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Chowdhury, AR & Joshi, RP 2018, Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications. in 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018., 8936791, 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 191-194, 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018, Jackson, United States, 06/3/18. https://doi.org/10.1109/IPMHVC.2018.8936791

Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications. / Chowdhury, Animesh R.; Joshi, Ravi P.

2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 191-194 8936791 (2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Joshi, Ravi P.

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N2 - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.

AB - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.

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Chowdhury AR, Joshi RP. Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications. In 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 191-194. 8936791. (2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018). doi: 10.1109/IPMHVC.2018.8936791

Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications

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Keywords

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