TY - GEN
T1 - Numerical Studies into the Possibility of "lock-On" in a GaN Photoconductive Switch for High Power Applications
AU - Chowdhury, Animesh R.
AU - Joshi, Ravi P.
PY - 2018/6
Y1 - 2018/6
N2 - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.
AB - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on the drift-diffusion theory is used. The model is tested for GaAs and shown to yield good agreement with data. The GaN simulations are then performed. The main findings are that deeper traps nearer the valence band at higher densities, and materials with larger high-field drift velocity would all aid in attaining Lock-On. The threshold field for Lock-on in GaN is predicted to be around 150 kV/cm, though this is strongly dependent on the trap parameters.
KW - Lock-On
KW - photoconductive switch
KW - pulsed power application
KW - semi-insulating semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85077822474&partnerID=8YFLogxK
U2 - 10.1109/IPMHVC.2018.8936791
DO - 10.1109/IPMHVC.2018.8936791
M3 - Conference contribution
T3 - 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
SP - 191
EP - 194
BT - 2018 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 3 June 2018 through 7 June 2018
ER -