Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications

Animesh R. Chowdhury, Sergey Nikishin, James Dickens, Andreas Neuber, Ravi P. Joshi, Richard Ness

Research output: Contribution to journalArticle

Abstract

Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the 'Lock-On' phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.

Original languageEnglish
Article number8662228
Pages (from-to)469-475
Number of pages7
JournalIEEE Transactions on Dielectrics and Electrical Insulation
Volume26
Issue number2
DOIs
StatePublished - Apr 2019

Keywords

  • lock-on
  • photoconductive switch
  • pulsed power application
  • semi-insulating semiconductors

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