TY - JOUR
T1 - Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications
AU - Chowdhury, Animesh R.
AU - Nikishin, Sergey
AU - Dickens, James
AU - Neuber, Andreas
AU - Joshi, Ravi P.
AU - Ness, Richard
N1 - Funding Information:
One of us (ARC) gratefully acknowledges partial support from the DEIS graduate fellowship. This work was also supported in part by US Army Contract W15QKN16C0085.
Publisher Copyright:
© 1994-2012 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the 'Lock-On' phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.
AB - Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the 'Lock-On' phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.
KW - lock-on
KW - photoconductive switch
KW - pulsed power application
KW - semi-insulating semiconductors
UR - http://www.scopus.com/inward/record.url?scp=85062635861&partnerID=8YFLogxK
U2 - 10.1109/TDEI.2018.007805
DO - 10.1109/TDEI.2018.007805
M3 - Article
AN - SCOPUS:85062635861
VL - 26
SP - 469
EP - 475
JO - IEEE Transactions on Dielectrics and Electrical Insulation
JF - IEEE Transactions on Dielectrics and Electrical Insulation
SN - 1070-9878
IS - 2
M1 - 8662228
ER -