Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications

Animesh R. Chowdhury; Sergey Nikishin; James Dickens; Andreas Neuber; Ravi P. Joshi; Richard Ness

doi:10.1109/TDEI.2018.007805

Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications

Animesh R. Chowdhury, Sergey Nikishin, James Dickens, Andreas Neuber, Ravi P. Joshi, Richard Ness

Electrical and Computer Engineering

Research output: Contribution to journal › Article

Abstract

Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the 'Lock-On' phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.

Original language	English
Article number	8662228
Pages (from-to)	469-475
Number of pages	7
Journal	IEEE Transactions on Dielectrics and Electrical Insulation
Volume	26
Issue number	2
DOIs	https://doi.org/10.1109/TDEI.2018.007805
State	Published - Apr 2019

Keywords

lock-on
photoconductive switch
pulsed power application
semi-insulating semiconductors

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10.1109/TDEI.2018.007805

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Chowdhury, A. R., Nikishin, S., Dickens, J., Neuber, A., Joshi, R. P., & Ness, R. (2019). Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications. IEEE Transactions on Dielectrics and Electrical Insulation, 26(2), 469-475. [8662228]. https://doi.org/10.1109/TDEI.2018.007805

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abstract = "Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the 'Lock-On' phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.",

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author = "Chowdhury, {Animesh R.} and Sergey Nikishin and James Dickens and Andreas Neuber and Joshi, {Ravi P.} and Richard Ness",

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Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications. / Chowdhury, Animesh R.; Nikishin, Sergey ; Dickens, James ; Neuber, Andreas ; Joshi, Ravi P.; Ness, Richard.

In: IEEE Transactions on Dielectrics and Electrical Insulation, Vol. 26, No. 2, 8662228, 04.2019, p. 469-475.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Numerical studies into the parameter space conducive to 'lock-on' in a GaN photoconductive switch for high power applications

AU - Chowdhury, Animesh R.

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AU - Joshi, Ravi P.

AU - Ness, Richard

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