Time-dependent photocurrent response in semi-insulating GaN is simulated with a focus on the Lock-On phenomenon. A one-dimensional, time-dependent model based on drift-diffusion theory is used. The model was first tested for GaAs and shown to yield good agreement with data, before applying it to GaN simulations. The main findings are that compensated GaN with deeper traps nearer the midgap at higher densities, and/or multiple levels around the mid-gap would aid in driving the PCSS towards Lock-On. The initial average threshold field for Lock-On in GaN is predicted to be around 150 kV/cm, though this would be strongly dependent on the trap parameters of a sample.
|Journal||IEEE Transactions on Dielectrics and Electrical Insulation|
|State||Published - Apr 15 2019|