Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

S. A. Nikishin; V. G. Antipov; S. S. Ruvimov; G. A. Seryogin; H. Temkin

doi:10.1063/1.118018

Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

S. A. Nikishin, V. G. Antipov, S. S. Ruvimov, G. A. Seryogin, H. Temkin

Electrical and Computer Engineering

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14 Scopus citations

Abstract

Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N₂H₄/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate.

Original language	English
Pages (from-to)	3227-3229
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	21
DOIs	https://doi.org/10.1063/1.118018
State	Published - Nov 18 1996

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title = "Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine",

abstract = "Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate.",

author = "Nikishin, {S. A.} and Antipov, {V. G.} and Ruvimov, {S. S.} and Seryogin, {G. A.} and H. Temkin",

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AU - Nikishin, S. A.

AU - Antipov, V. G.

AU - Ruvimov, S. S.

AU - Seryogin, G. A.

AU - Temkin, H.

PY - 1996/11/18

Y1 - 1996/11/18

N2 - Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate.

AB - Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

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