Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

S. A. Nikishin, V. G. Antipov, S. S. Ruvimov, G. A. Seryogin, H. Temkin

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate.

Original languageEnglish
Pages (from-to)3227-3229
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number21
DOIs
StatePublished - Nov 18 1996

Fingerprint Dive into the research topics of 'Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine'. Together they form a unique fingerprint.

Cite this