The intensity-dependent light absorption in bulk high-purity semi-insulating 4H-SiC at above band gap photon energies has been studied. In particular, 3.49 eV (355 nm) UV absorption of 160 μm-thick samples of varying recombination lifetimes in the intensity range of 1 mJ/cm2-30 mJ/cm2 is addressed. The effective absorption coefficient was found to vary up to 30% within this range. Assuming deep level trapping, interband absorption, and free carrier absorption as dominant processes, a four energy level model reproduces the experimentally observed absorption behavior. While nonlinearities in the optical absorption behavior of SiC have been studied previously as function of wavelength α(λ), temperature α(T) and, to a very limited extent, at below bandgap optical intensities, the presented elucidates the UV intensity-dependent nonlinear absorption behavior, α(I), of SiC at above bandgap photon energies.