Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN

C. Jin, Y. Qiu, S. A. Nikishin, H. Temkin

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the arsenic and gallium fluxes, at growth temperatures between 430 and 500 °C. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct of trimethylgallium and dimethylhydrazine. The model accounts for experimentally observed relationships between growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature.

Original languageEnglish
Pages (from-to)3516-3518
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number23
DOIs
StatePublished - Jun 7 1999

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