New experimental findings on process-induced hot-carrier degradation of deep-submicron N-MOSFETs

D. Y.C. Lie, J. Yota, W. Xia, A. B. Joshi, R. A. Williams, R. Zwingman, L. Chung, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

10 Scopus citations

Abstract

Severe hot-carrier degradation has been observed in deep-submicron N-MOSFETs, and it is shown to be caused by several advanced device processing steps. These processing steps can also introduce significant changes in other device parameters such as the threshold voltage and transconductance, etc., for devices without any hot-carrier stress. Two major achievements of this work are: (1) We systematically illustrate that the process-induced lifetime degradation is most sensitive to details of back-end wafer processing, particularly when it involves high-density-plasma (HDP-CVD) oxide deposition and H2 annealing; (2) We demonstrate experimentally, for the first time, that using a properly designed SiN Pre-Metal-Dielectric (PMD) liner process can most effectively stop the back-end process-induced lifetime degradation. This result is different from previous reports which indicated that an additional SiN liner could further degrade the device lifetime [1-3]. We will show that this apparent inconsistency is partly because one needs to very careful in designing the liner process to make it work properly, and partly because the previous studies did not cover the back-end process-induced hot-carrier effects.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages362-369
Number of pages8
ISBN (Print)0780352203
StatePublished - 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: Mar 23 1999Mar 25 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period03/23/9903/25/99

Fingerprint Dive into the research topics of 'New experimental findings on process-induced hot-carrier degradation of deep-submicron N-MOSFETs'. Together they form a unique fingerprint.

Cite this