Abstract
The temperature distribution along the crystallization front is analyzed for selective maskless liquid-phase electroepitaxy (LPEE). New methods for using LPEE to control the surface profile of epitaxial layers during growth are pointed out.
| Original language | English |
|---|---|
| Pages (from-to) | 641-643 |
| Number of pages | 3 |
| Journal | Soviet physics. Technical physics |
| Volume | 29 |
| Issue number | 6 |
| State | Published - Jun 1984 |