Abstract
The temperature distribution along the crystallization front is analyzed for selective maskless liquid-phase electroepitaxy (LPEE). New methods for using LPEE to control the surface profile of epitaxial layers during growth are pointed out.
Original language | English |
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Pages (from-to) | 641-643 |
Number of pages | 3 |
Journal | Soviet physics. Technical physics |
Volume | 29 |
Issue number | 6 |
State | Published - Jun 1984 |