Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

G. D. Chen; M. Smith; J. Y. Lin; H. X. Jiang; M. Asif Khan; C. J. Sun

doi:10.1063/1.115046

Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun

Electrical and Computer Engineering

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Abstract

Neutral-donor-bound exciton recombination (I₂) dynamics have been studied by photoluminescence in an unintentionally doped n-type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time-resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained.

Original language	English
Pages (from-to)	1653
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115046
State	Published - 1995

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abstract = "Neutral-donor-bound exciton recombination (I2) dynamics have been studied by photoluminescence in an unintentionally doped n-type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time-resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained.",

author = "Chen, {G. D.} and M. Smith and Lin, {J. Y.} and Jiang, {H. X.} and Khan, {M. Asif} and Sun, {C. J.}",

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language = "English",

volume = "67",

pages = "1653",

journal = "Applied Physics Letters",

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T1 - Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

AU - Chen, G. D.

AU - Smith, M.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Khan, M. Asif

AU - Sun, C. J.

PY - 1995

Y1 - 1995

N2 - Neutral-donor-bound exciton recombination (I2) dynamics have been studied by photoluminescence in an unintentionally doped n-type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time-resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained.

AB - Neutral-donor-bound exciton recombination (I2) dynamics have been studied by photoluminescence in an unintentionally doped n-type GaN epitaxial layer grown by metalorganic chemical vapor deposition. The luminescence emission line shape, peak position, and intensity as functions of temperature have been measured. In particular, time-resolved emission spectroscopy has been employed to study the dynamic processes of the bound exciton recombination, from which the temperature and the emission energy dependencies of the recombination lifetime of this transition have been obtained.

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DO - 10.1063/1.115046

M3 - Article

AN - SCOPUS:0029377974

SN - 0003-6951

VL - 67

SP - 1653

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

Abstract

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