Abstract
The kinetics of the recombination of electrons trapped by donors, with holes trapped by acceptors, in semiconductor materials within a uniform electric field has been investigated. A simple form has been derived which shows that the decay rate of neutral donor-acceptor-pair (DAP) recombination increases under the presence of the electric field. This analysis can also be applied to the processes of neutral DAP recombination in quantum wells and superlattices where electric fields are always present in the interface regions.
| Original language | English |
|---|---|
| Pages (from-to) | 4126-4131 |
| Number of pages | 6 |
| Journal | Physical Review B |
| Volume | 37 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1988 |