Neutral donor-acceptor-pair recombination under a uniform electric field

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Abstract

The kinetics of the recombination of electrons trapped by donors, with holes trapped by acceptors, in semiconductor materials within a uniform electric field has been investigated. A simple form has been derived which shows that the decay rate of neutral donor-acceptor-pair (DAP) recombination increases under the presence of the electric field. This analysis can also be applied to the processes of neutral DAP recombination in quantum wells and superlattices where electric fields are always present in the interface regions.

Original languageEnglish
Pages (from-to)4126-4131
Number of pages6
JournalPhysical Review B
Volume37
Issue number8
DOIs
StatePublished - 1988

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