Nature of deep center emissions in GaN

A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang

doi:10.1063/1.3389497

Nature of deep center emissions in GaN

A. Sedhain, J. Li, J. Y. Lin, H. X. Jiang

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Abstract

Photoluminescence (PL) emission spectroscopy was employed to probe the nature of deep center emissions in GaN. The room temperature PL spectrum measured in the infrared (IR) region revealed an emission band centered around 1.23 eV. Based on detailed analysis of both the IR and visible emission spectra, we suggest that this emission band is a band-to-impurity transition involving a deep level complex consisting of a gallium vacancy and an oxygen atom sitting on one of the neighboring nitrogen sites; the (V_Ga - O _N)^2- charge state of (V_Ga - O_N) ^2-/1-. Two electronic structures, which arise due to two different configurations of (V_Ga - O_N) ^2-/1-, with O _N either along the c-axis (axial configuration) or in one of the three equivalent tetrahedral positions (basal configuration), were observed. Our result also provides explicit evidence that both the yellow luminescence band and the 1.23 eV emission line in GaN are related to a common deep center, which is believed to be (V_Ga - O_N)^2-/1-.

Original language	English
Article number	151902
Journal	Applied Physics Letters
Volume	96
Issue number	15
DOIs	https://doi.org/10.1063/1.3389497
State	Published - Apr 12 2010

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title = "Nature of deep center emissions in GaN",

abstract = "Photoluminescence (PL) emission spectroscopy was employed to probe the nature of deep center emissions in GaN. The room temperature PL spectrum measured in the infrared (IR) region revealed an emission band centered around 1.23 eV. Based on detailed analysis of both the IR and visible emission spectra, we suggest that this emission band is a band-to-impurity transition involving a deep level complex consisting of a gallium vacancy and an oxygen atom sitting on one of the neighboring nitrogen sites; the (VGa - O N)2- charge state of (VGa - ON) 2-/1-. Two electronic structures, which arise due to two different configurations of (VGa - ON) 2-/1-, with O N either along the c-axis (axial configuration) or in one of the three equivalent tetrahedral positions (basal configuration), were observed. Our result also provides explicit evidence that both the yellow luminescence band and the 1.23 eV emission line in GaN are related to a common deep center, which is believed to be (VGa - ON)2-/1-.",

author = "A. Sedhain and J. Li and Lin, {J. Y.} and Jiang, {H. X.}",

note = "Funding Information: This work is supported by DOE under Grant No. FG02-09ER46552. H. X. Jiang and J. Y. Lin would like to acknowledge the support of Whitacre endowed chair positions through the AT&T foundation.",

year = "2010",

month = apr,

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doi = "10.1063/1.3389497",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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T1 - Nature of deep center emissions in GaN

AU - Sedhain, A.

AU - Li, J.

AU - Lin, J. Y.

AU - Jiang, H. X.

N1 - Funding Information: This work is supported by DOE under Grant No. FG02-09ER46552. H. X. Jiang and J. Y. Lin would like to acknowledge the support of Whitacre endowed chair positions through the AT&T foundation.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - Photoluminescence (PL) emission spectroscopy was employed to probe the nature of deep center emissions in GaN. The room temperature PL spectrum measured in the infrared (IR) region revealed an emission band centered around 1.23 eV. Based on detailed analysis of both the IR and visible emission spectra, we suggest that this emission band is a band-to-impurity transition involving a deep level complex consisting of a gallium vacancy and an oxygen atom sitting on one of the neighboring nitrogen sites; the (VGa - O N)2- charge state of (VGa - ON) 2-/1-. Two electronic structures, which arise due to two different configurations of (VGa - ON) 2-/1-, with O N either along the c-axis (axial configuration) or in one of the three equivalent tetrahedral positions (basal configuration), were observed. Our result also provides explicit evidence that both the yellow luminescence band and the 1.23 eV emission line in GaN are related to a common deep center, which is believed to be (VGa - ON)2-/1-.

AB - Photoluminescence (PL) emission spectroscopy was employed to probe the nature of deep center emissions in GaN. The room temperature PL spectrum measured in the infrared (IR) region revealed an emission band centered around 1.23 eV. Based on detailed analysis of both the IR and visible emission spectra, we suggest that this emission band is a band-to-impurity transition involving a deep level complex consisting of a gallium vacancy and an oxygen atom sitting on one of the neighboring nitrogen sites; the (VGa - O N)2- charge state of (VGa - ON) 2-/1-. Two electronic structures, which arise due to two different configurations of (VGa - ON) 2-/1-, with O N either along the c-axis (axial configuration) or in one of the three equivalent tetrahedral positions (basal configuration), were observed. Our result also provides explicit evidence that both the yellow luminescence band and the 1.23 eV emission line in GaN are related to a common deep center, which is believed to be (VGa - ON)2-/1-.

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DO - 10.1063/1.3389497

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SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 151902

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Nature of deep center emissions in GaN

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