Narrow pulse evaluation of 15 KV SiC MOSFETs and IGBTs

E. A. Hirsch, J. A. Schrock, S. B. Bayne, H. O'Brien, A. Ogunniyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

With the progression of silicon carbide (SiC) technologies, single semiconductor switches with higher voltage and current capabilities are emerging. Evaluating the pulsed current capability of SiC semiconductor devices for pulsed power and power electronics applications is required to understand their performance and reliability. This paper presents the narrow pulse evaluation of 15 kV SiC MOSFETs (0.25 cm2 active area) and IGBTs (0.32 cm2 active area) with pulse widths in the range of 500 ns to 2 μs. Testing results are presented with an 8 kV charge voltage and 50 A and 330 A peak conduction current for the MOSFET and IGBT, respectively. A fairly low inductance (<500 nH) RLC circuit was used to generate the pulses and the device under test (DUT) was switched off during the pulse to create a trapezoidal type current waveform through the device. Transient characteristics, such as turn-on and turnoff times and energies, were measured to benchmark the devices' narrow pulse characteristics. The results presented in this paper demonstrate the characteristics of these devices for over-current narrow pulse applications.

Original languageEnglish
Title of host publication2017 IEEE 21st International Conference on Pulsed Power, PPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781509057481
DOIs
StatePublished - Feb 13 2018
Event21st IEEE International Conference on Pulsed Power, PPC 2017 - Brighton, United Kingdom
Duration: Jun 18 2017Jun 22 2017

Publication series

NameIEEE International Pulsed Power Conference
Volume2017-June
ISSN (Print)2158-4915
ISSN (Electronic)2158-4923

Conference

Conference21st IEEE International Conference on Pulsed Power, PPC 2017
CountryUnited Kingdom
CityBrighton
Period06/18/1706/22/17

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