TY - GEN
T1 - Narrow pulse evaluation of 15 KV SiC MOSFETs and IGBTs
AU - Hirsch, E. A.
AU - Schrock, J. A.
AU - Bayne, S. B.
AU - O'Brien, H.
AU - Ogunniyi, A.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2018/2/13
Y1 - 2018/2/13
N2 - With the progression of silicon carbide (SiC) technologies, single semiconductor switches with higher voltage and current capabilities are emerging. Evaluating the pulsed current capability of SiC semiconductor devices for pulsed power and power electronics applications is required to understand their performance and reliability. This paper presents the narrow pulse evaluation of 15 kV SiC MOSFETs (0.25 cm2 active area) and IGBTs (0.32 cm2 active area) with pulse widths in the range of 500 ns to 2 μs. Testing results are presented with an 8 kV charge voltage and 50 A and 330 A peak conduction current for the MOSFET and IGBT, respectively. A fairly low inductance (<500 nH) RLC circuit was used to generate the pulses and the device under test (DUT) was switched off during the pulse to create a trapezoidal type current waveform through the device. Transient characteristics, such as turn-on and turnoff times and energies, were measured to benchmark the devices' narrow pulse characteristics. The results presented in this paper demonstrate the characteristics of these devices for over-current narrow pulse applications.
AB - With the progression of silicon carbide (SiC) technologies, single semiconductor switches with higher voltage and current capabilities are emerging. Evaluating the pulsed current capability of SiC semiconductor devices for pulsed power and power electronics applications is required to understand their performance and reliability. This paper presents the narrow pulse evaluation of 15 kV SiC MOSFETs (0.25 cm2 active area) and IGBTs (0.32 cm2 active area) with pulse widths in the range of 500 ns to 2 μs. Testing results are presented with an 8 kV charge voltage and 50 A and 330 A peak conduction current for the MOSFET and IGBT, respectively. A fairly low inductance (<500 nH) RLC circuit was used to generate the pulses and the device under test (DUT) was switched off during the pulse to create a trapezoidal type current waveform through the device. Transient characteristics, such as turn-on and turnoff times and energies, were measured to benchmark the devices' narrow pulse characteristics. The results presented in this paper demonstrate the characteristics of these devices for over-current narrow pulse applications.
UR - http://www.scopus.com/inward/record.url?scp=85054273923&partnerID=8YFLogxK
U2 - 10.1109/PPC.2017.8291248
DO - 10.1109/PPC.2017.8291248
M3 - Conference contribution
AN - SCOPUS:85054273923
SN - 9781509057481
T3 - IEEE International Pulsed Power Conference
BT - 2017 IEEE 21st International Conference on Pulsed Power, PPC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 18 June 2017 through 22 June 2017
ER -