Results of electron beam controlled switching in zinc selenide (ZnSe), quartz, and preliminary results in sapphire are analyzed. Initial tests yielded indistinguishable data for charging voltages between 0.1 to 1 kV. For later tests, introduction of a ground plane with an opening in front of the sample reduced beam `noise' by an order of magnitude for some ZnSe samples, resulting in data obtained for small charging voltages on the order of 100 V and up. In all cases, switch resistance was drastically reduced in response to the electron beam. The ZnSe switch recovery was exponential, whereas the quartz samples showed nearly instantaneous on/off response to the e-beam. Preliminary sapphire tests showed a switching response to the e-beam.
|Number of pages||6|
|State||Published - 1995|
|Event||Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2) - Albuquerque, NM, USA|
Duration: Jul 3 1995 → Jul 6 1995
|Conference||Proceedings of the 1995 10th IEEE International Pulsed Power Conference. Part 1 (of 2)|
|City||Albuquerque, NM, USA|
|Period||07/3/95 → 07/6/95|