Multilayer graphene films grown by molecular beam deposition

Jorge M. Garcia; Rui He; Mason P. Jiang; Jun Yan; Aron Pinczuk; Yuri M. Zuev; Keun Soo Kim; Philip Kim; Kirk Baldwin; Ken W. West; Loren N. Pfeiffer

doi:10.1016/j.ssc.2010.02.029

Multilayer graphene films grown by molecular beam deposition

Jorge M. Garcia, Rui He, Mason P. Jiang, Jun Yan, Aron Pinczuk, Yuri M. Zuev, Keun Soo Kim, Philip Kim, Kirk Baldwin, Ken W. West, Loren N. Pfeiffer

Electrical and Computer Engineering

Research output: Contribution to journal › Article

26 Scopus citations

Abstract

Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.

Original language	English
Pages (from-to)	809-811
Number of pages	3
Journal	Solid State Communications
Volume	150
Issue number	17-18
DOIs	https://doi.org/10.1016/j.ssc.2010.02.029
State	Published - May 2010

Keywords

A. Graphene
B. Crystal growth
E. Inelastic light scattering

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10.1016/j.ssc.2010.02.029

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Garcia, J. M., He, R., Jiang, M. P., Yan, J., Pinczuk, A., Zuev, Y. M., Kim, K. S., Kim, P., Baldwin, K., West, K. W., & Pfeiffer, L. N. (2010). Multilayer graphene films grown by molecular beam deposition. Solid State Communications, 150(17-18), 809-811. https://doi.org/10.1016/j.ssc.2010.02.029

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title = "Multilayer graphene films grown by molecular beam deposition",

abstract = "Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 {\AA} to less than 4 {\AA}. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.",

keywords = "A. Graphene, B. Crystal growth, E. Inelastic light scattering",

author = "Garcia, {Jorge M.} and Rui He and Jiang, {Mason P.} and Jun Yan and Aron Pinczuk and Zuev, {Yuri M.} and Kim, {Keun Soo} and Philip Kim and Kirk Baldwin and West, {Ken W.} and Pfeiffer, {Loren N.}",

year = "2010",

month = may,

doi = "10.1016/j.ssc.2010.02.029",

language = "English",

volume = "150",

pages = "809--811",

journal = "Solid State Communications",

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T1 - Multilayer graphene films grown by molecular beam deposition

AU - Garcia, Jorge M.

AU - He, Rui

AU - Jiang, Mason P.

AU - Yan, Jun

AU - Pinczuk, Aron

AU - Zuev, Yuri M.

AU - Kim, Keun Soo

AU - Kim, Philip

AU - Baldwin, Kirk

AU - West, Ken W.

AU - Pfeiffer, Loren N.

PY - 2010/5

Y1 - 2010/5

N2 - Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.

AB - Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.

KW - A. Graphene

KW - B. Crystal growth

KW - E. Inelastic light scattering

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U2 - 10.1016/j.ssc.2010.02.029

DO - 10.1016/j.ssc.2010.02.029

M3 - Article

AN - SCOPUS:77949485900

VL - 150

SP - 809

EP - 811

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 17-18

ER -