Abstract
Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.
Original language | English |
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Pages (from-to) | 809-811 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 150 |
Issue number | 17-18 |
DOIs | |
State | Published - May 2010 |
Keywords
- A. Graphene
- B. Crystal growth
- E. Inelastic light scattering