Multilayer graphene films grown by molecular beam deposition

Jorge M. Garcia, Rui He, Mason P. Jiang, Jun Yan, Aron Pinczuk, Yuri M. Zuev, Keun Soo Kim, Philip Kim, Kirk Baldwin, Ken W. West, Loren N. Pfeiffer

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800-900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from ∼70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.

Original languageEnglish
Pages (from-to)809-811
Number of pages3
JournalSolid State Communications
Volume150
Issue number17-18
DOIs
StatePublished - May 2010

Keywords

  • A. Graphene
  • B. Crystal growth
  • E. Inelastic light scattering

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    Garcia, J. M., He, R., Jiang, M. P., Yan, J., Pinczuk, A., Zuev, Y. M., Kim, K. S., Kim, P., Baldwin, K., West, K. W., & Pfeiffer, L. N. (2010). Multilayer graphene films grown by molecular beam deposition. Solid State Communications, 150(17-18), 809-811. https://doi.org/10.1016/j.ssc.2010.02.029