MOVPE growth of GaN and LED on (1 1 1) MgAl2O4

Shukun Duan, Xuegong Teng, Yutian Wang, Gaohua Li, Hongxing Jiang, Peide Han, Da Cheng Lu

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The growth of wurtzite GaN by low-pressure metalorganic vapor-phase epitaxy on (1 1 1) magnesium aluminate (MgAl2O4) substrates have been studied. The morphological, crystalline, electrical and optical properties are investigated. A p-n junction GaN LED was fabricated on the MgAl2O4 substrate.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalJournal of Crystal Growth
StatePublished - Jun 15 1998


  • GaN
  • LED
  • MgAlO

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    Duan, S., Teng, X., Wang, Y., Li, G., Jiang, H., Han, P., & Lu, D. C. (1998). MOVPE growth of GaN and LED on (1 1 1) MgAl2O4. Journal of Crystal Growth, 189-190, 197-201.