Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55μm laser applications

Wilson De Carvalho, Ayrton André Bernussi, Mario Tosi Furtado, Angelo Luiz Gobbi, Mônica Cotta

Research output: Contribution to journalArticle

Abstract

Zero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) structures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55μm laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray diffraction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency.

Original languageEnglish
Pages (from-to)839-842
Number of pages4
JournalBrazilian Journal of Physics
Volume29
Issue number4
DOIs
StatePublished - Dec 1999

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