Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

D. Y. Song, V. Kuryatkov, M. Basavaraj, D. Rosenbladt, S. A. Nikishin, M. Holtz, A. L. Syrkin, A. S. Usikov, V. A. Ivantsov, V. A. Dmitriev

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Abstract

We report studies of the morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy. The layers have been grown on c -plane sapphire substrates and epitaxial GaN, Al0.7 Ga0.3 N, and AlN templates grown on sapphire. InN properties are found to depend on template type with improvement of crystal structure in the template substrate order AlN→AlGaN→GaN. X-ray studies reveal InN layers grown on template substrates to be relaxed with lattice constants a=3.542 Å and c=5.716 Å. The Raman spectra and optical gaps of the InN layers, vary with free-carrier concentration in agreement with previous studies. We obtain a value of 2.5±0.2 for the index of refraction of InN.

Original languageEnglish
Article number116103
JournalJournal of Applied Physics
Volume99
Issue number11
DOIs
StatePublished - Jun 1 2006

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