Monte Carlo Transport Analysis to Assess Intensity Dependent Response of a GaN Photoconductor

William Milestone; Guo Dong; Mahdi Sanati; Karen M Dowling; Stephen Hau-Riege; Lars F Voss; Adam Conway; Ravindra Joshi

Monte Carlo Transport Analysis to Assess Intensity Dependent Response of a GaN Photoconductor

William Milestone, Guo Dong, Mahdi Sanati, Karen M Dowling, Stephen Hau-Riege, Lars F Voss, Adam Conway, Ravindra Joshi

Research output: Contribution to journal › Article › peer-review

Abstract

Evaluation of the photoresponse in wurtzite GaN photoconductive switches is presented based on kinetic Monte Carlo simulations. The focus is on electron transport physics and assessment of high frequency operation. The role of GaN bandstructure, Pauli exclusion, and treatment of internal fields based on the Fast Multipole Method (FMM), are all comprehensively included. The implementation was validated through comparisons of velocity-field characteristics for GaN with computational results in the literature. Photocurrent widths of less than ~ 7 ps for the 1 μm device can be expected, which translates into a 100 GHz upperbound. Photocurrent pulse compression below the laser full width at half maxima (FWHM) at high applied fields are predicted based on the interplay of space-charge effects and the negative differential velocity characteristics of GaN.

Original language	English
Pages (from-to)	195703
Journal	Journal of Applied Physics
State	Published - Apr 2021

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@article{0b572327f17f4089b4acd40483d16fa0,

title = "Monte Carlo Transport Analysis to Assess Intensity Dependent Response of a GaN Photoconductor",

abstract = "Evaluation of the photoresponse in wurtzite GaN photoconductive switches is presented based on kinetic Monte Carlo simulations. The focus is on electron transport physics and assessment of high frequency operation. The role of GaN bandstructure, Pauli exclusion, and treatment of internal fields based on the Fast Multipole Method (FMM), are all comprehensively included. The implementation was validated through comparisons of velocity-field characteristics for GaN with computational results in the literature. Photocurrent widths of less than ~ 7 ps for the 1 μm device can be expected, which translates into a 100 GHz upperbound. Photocurrent pulse compression below the laser full width at half maxima (FWHM) at high applied fields are predicted based on the interplay of space-charge effects and the negative differential velocity characteristics of GaN.",

author = "William Milestone and Guo Dong and Mahdi Sanati and Dowling, {Karen M} and Stephen Hau-Riege and Voss, {Lars F} and Adam Conway and Ravindra Joshi",

year = "2021",

month = apr,

language = "English",

pages = "195703",

journal = "Journal of Applied Physics",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Monte Carlo Transport Analysis to Assess Intensity Dependent Response of a GaN Photoconductor

AU - Milestone, William

AU - Dong, Guo

AU - Sanati, Mahdi

AU - Dowling, Karen M

AU - Hau-Riege, Stephen

AU - Voss, Lars F

AU - Conway, Adam

AU - Joshi, Ravindra

PY - 2021/4

Y1 - 2021/4

N2 - Evaluation of the photoresponse in wurtzite GaN photoconductive switches is presented based on kinetic Monte Carlo simulations. The focus is on electron transport physics and assessment of high frequency operation. The role of GaN bandstructure, Pauli exclusion, and treatment of internal fields based on the Fast Multipole Method (FMM), are all comprehensively included. The implementation was validated through comparisons of velocity-field characteristics for GaN with computational results in the literature. Photocurrent widths of less than ~ 7 ps for the 1 μm device can be expected, which translates into a 100 GHz upperbound. Photocurrent pulse compression below the laser full width at half maxima (FWHM) at high applied fields are predicted based on the interplay of space-charge effects and the negative differential velocity characteristics of GaN.

AB - Evaluation of the photoresponse in wurtzite GaN photoconductive switches is presented based on kinetic Monte Carlo simulations. The focus is on electron transport physics and assessment of high frequency operation. The role of GaN bandstructure, Pauli exclusion, and treatment of internal fields based on the Fast Multipole Method (FMM), are all comprehensively included. The implementation was validated through comparisons of velocity-field characteristics for GaN with computational results in the literature. Photocurrent widths of less than ~ 7 ps for the 1 μm device can be expected, which translates into a 100 GHz upperbound. Photocurrent pulse compression below the laser full width at half maxima (FWHM) at high applied fields are predicted based on the interplay of space-charge effects and the negative differential velocity characteristics of GaN.

M3 - Article

SP - 195703

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Monte Carlo Transport Analysis to Assess Intensity Dependent Response of a GaN Photoconductor

Abstract

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