Abstract
Full electrodynamic Monte Carlo simulations have been performed to evaluate the electrical response of nanoscale GaAs photomixers driven by dual laser beams. Low temperature grown GaAs structures are shown to be capable of providing terahertz signals. Photocurrent results indicate an advantage in increasing input laser power. However, bulk heating due to carrier trapping and phonon emission is shown to be fairly significant, and should set a natural limit to laser input scaling. Finally, the simulations reveal that special antenna structures would be necessary for the efficient coupling and transmission of radiative energy.
Original language | English |
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Pages (from-to) | 187-196 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3277 |
DOIs | |
State | Published - 1998 |
Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Keywords
- Low temperature GaAs
- Monte Carlo simulation
- Photomixer
- Terahertz response