Abstract
Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications.
Original language | English |
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Pages (from-to) | 1331-1338 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 91 |
Issue number | 3 |
DOIs | |
State | Published - Feb 1 2002 |