Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs

G. Satyanadh; R. P. Joshi; N. Abedin; U. Singh

doi:10.1063/1.1429771

Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs

G. Satyanadh, R. P. Joshi, N. Abedin, U. Singh

Electrical and Computer Engineering

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25 Scopus citations

Abstract

Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications.

Original language	English
Pages (from-to)	1331-1338
Number of pages	8
Journal	Journal of Applied Physics
Volume	91
Issue number	3
DOIs	https://doi.org/10.1063/1.1429771
State	Published - Feb 1 2002

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abstract = "Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications.",

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AB - Field dependent drift velocity results are presented for electron transport in bulk indium arsenide (InAs) material based on a Monte Carlo model, which includes an analytical treatment of band-to-band impact ionization. Avalanche multiplication and related excess noise factor (F) are computed as a function of device length and applied voltage. A decrease in F with increases in device length is obtained. The results suggest an inherent utility for InAs-based single-photon avalanche detectors, particularly around the 2 μm region of interest for atmospheric remote sensing applications.

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Monte Carlo calculation of electron drift characteristics and avalanche noise in bulk InAs

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